Microelectronic structures including bridges

ABSTRACT

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

BACKGROUND

In conventional microelectronic packages, a die may be attached to anorganic package substrate by solder. Such a package may be limited inthe achievable interconnect density between the package substrate andthe die, the achievable speed of signal transfer, and the achievableminiaturization, for example.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements. Embodiments are illustrated by way of example, not by way oflimitation, in the figures of the accompanying drawings.

FIG. 1 is a side, cross-sectional view of an example microelectronicstructure, in accordance with various embodiments.

FIG. 2 is a side, cross-sectional view of an example microelectronicassembly including the microelectronic structure of FIG. 1, inaccordance with various embodiments.

FIGS. 3-10 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic assembly ofFIG. 2, in accordance with various embodiments.

FIGS. 11-16 are side, cross-sectional views of example microelectronicstructures, in accordance with various embodiments.

FIGS. 17-25 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure ofFIG. 14, in accordance with various embodiments.

FIG. 26 is a side, cross-sectional view of an example microelectronicstructure, in accordance with various embodiments.

FIGS. 27-28 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure ofFIG. 26.

FIG. 29 is a side, cross-sectional view of an example microelectronicstructure, in accordance with various embodiments.

FIGS. 30-31 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure ofFIG. 29.

FIG. 32 is a side, cross-sectional view of an example microelectronicstructure, in accordance with various embodiments.

FIGS. 33-34 are side, cross-sectional views of various stages in anexample process for the manufacture a microelectronic assembly includingthe microelectronic structure of FIG. 32.

FIG. 35 is a side, cross-sectional view of an example microelectronicstructure, in accordance with various embodiments.

FIGS. 36-52 are side, cross-sectional, exploded views of examplemicroelectronic assemblies, in accordance with various embodiments.

FIGS. 53-54 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure ofFIG. 52.

FIGS. 55-57 are side, cross-sectional, exploded views of examplemicroelectronic assemblies, in accordance with various embodiments.

FIG. 58 is a top view of a wafer and dies that may be included in amicroelectronic structure or microelectronic assembly in accordance withany of the embodiments disclosed herein.

FIG. 59 is a side, cross-sectional view of an integrated circuit (IC)device that may include be included in a microelectronic structure ormicroelectronic assembly in accordance with any of the embodimentsdisclosed herein.

FIG. 60 is a side, cross-sectional view of an IC device assembly thatmay include a microelectronic structure or microelectronic assembly inaccordance with any of the embodiments disclosed herein.

FIG. 61 is a block diagram of an example electrical device that mayinclude a microelectronic structure or microelectronic assembly inaccordance with any of the embodiments disclosed herein.

DETAILED DESCRIPTION

Disclosed herein are microelectronic structures including bridges, aswell as related assemblies and methods. In some embodiments, amicroelectronic structure may include a substrate and a bridge in acavity of the substrate. Microelectronic components may be coupled toboth the substrate and the bridge.

To achieve high interconnect density in a microelectronics package, someconventional approaches require costly manufacturing operations, such asfine-pitch via formation and first-level interconnect plating insubstrate layers over an embedded bridge, done at panel scale. Themicroelectronic structures and assemblies disclosed herein may achieveinterconnect densities as high or higher than conventional approacheswithout the expense of conventional costly manufacturing operations.Further, the microelectronic structures and assemblies disclosed hereinoffer new flexibility to electronics designers and manufacturers,allowing them to select an architecture that achieves their device goalswithout excess cost or manufacturing complexity.

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof wherein like numeralsdesignate like parts throughout, and in which is shown, by way ofillustration, embodiments that may be practiced. It is to be understoodthat other embodiments may be utilized, and structural or logicalchanges may be made, without departing from the scope of the presentdisclosure. Therefore, the following detailed description is not to betaken in a limiting sense.

Various operations may be described as multiple discrete actions oroperations in turn, in a manner that is most helpful in understandingthe claimed subject matter. However, the order of description should notbe construed as to imply that these operations are necessarily orderdependent. In particular, these operations may not be performed in theorder of presentation. Operations described may be performed in adifferent order from the described embodiment. Various additionaloperations may be performed, and/or described operations may be omittedin additional embodiments.

For the purposes of the present disclosure, the phrase “A and/or B”means (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B, and C). The phrase “A or B” means (A),(B), or (A and B). The drawings are not necessarily to scale. Althoughmany of the drawings illustrate rectilinear structures with flat wallsand right-angle corners, this is simply for ease of illustration, andactual devices made using these techniques will exhibit rounded corners,surface roughness, and other features.

The description uses the phrases “in an embodiment” or “in embodiments,”which may each refer to one or more of the same or differentembodiments. Furthermore, the terms “comprising,” “including,” “having,”and the like, as used with respect to embodiments of the presentdisclosure, are synonymous. When used to describe a range of dimensions,the phrase “between X and Y” represents a range that includes X and Y.

FIG. 1 is a side, cross-sectional view of an example microelectronicstructure 100. The microelectronic structure 100 may include a substrate102 and a bridge component 110 in a cavity 120 at a “top” face of thesubstrate 102. The substrate 102 may include a dielectric material 112and conductive material 108, with the conductive material 108 arrangedin the dielectric material 112 (e.g., in lines and vias, as shown) toprovide conductive pathways through the substrate 102. In someembodiments, the dielectric material 112 may include an organicmaterial, such as an organic buildup film. In some embodiments, thedielectric material 112 may include a ceramic, an epoxy film havingfiller particles therein, glass, an inorganic material, or combinationsof organic and inorganic materials, for example. In some embodiments,the conductive material 108 may include a metal (e.g., copper). In someembodiments, the substrate 102 may include layers of dielectric material112/conductive material 108, with lines of conductive material 108 inone layer electrically coupled to lines of conductive material 108 in anadjacent layer by vias of the conductive material 108. A substrate 102including such layers may be formed using a printed circuit board (PCB)fabrication technique, for example. A substrate 102 may include N suchlayers, where N is an integer greater than or equal to one; in theaccompanying drawings, the layers are labeled in descending order fromthe face of the substrate 102 closest to the cavity 120 (e.g., layer N,layer N−1, layer N−2, etc.). Although a particular number andarrangement of layers of dielectric material 112/conductive material 108are shown in various ones of the accompanying figures, these particularnumbers and arrangements are simply illustrative, and any desired numberand arrangement of dielectric material 112/conductive material 108 maybe used. For example, although FIG. 1 and others of the accompanyingdrawings do not illustrate conductive material 108 in layer N−1 underthe bridge component 110, conductive material 108 may be present inlayer N−1 under the bridge component 110. Further, although a particularnumber of layers are shown in the substrate 102 (e.g., five layers),these layers may represent only a portion of the substrate 102, andfurther layers may be present (e.g., layers N−5, N−6, etc.).

As noted above, a microelectronic structure 100 may include a cavity 120at the “top” face of the substrate 102. In the embodiment of FIG. 1, thecavity 120 extends through a surface insulation material 104 at the“top” face, and the bottom of the cavity is provided by the “topmost”dielectric material 112. The surface insulation material 104 may includea solder resist and/or other dielectric materials that may providesurface electrical insulation and may be compatible with solder-based ornon-solder based interconnects, as appropriate. In other embodiments, acavity 120 in a substrate 102 may extend into the dielectric material112, as discussed further below. The cavity 120 may have a taperedshape, as shown in FIG. 1, narrowing towards the bottom of the cavity120. The substrate 102 may include conductive contacts 114 at the “top”face that are coupled to conductive pathways formed by the conductivematerial 108 through the dielectric material 112, allowing componentselectrically coupled to the conductive contacts 114 (not shown in FIG.1, but discussed below with reference to FIG. 2) to circuitry within thesubstrate 102 and/or to other components electrically coupled to thesubstrate 102. The conductive contacts 114 may include a surface finish116, which may protect the underlying material of the conductive contactfrom corrosion. In some embodiments, the surface finish 116 may includenickel, palladium, gold, or a combination thereof. The conductivecontacts 114 may be located at the “top” face and outside the cavity120; as shown, the surface insulation material 104 may include openingsat the bottom of which the surface finishes 116 of the conductivecontacts 114 are exposed. In FIG. 1, solder 106 (e.g., a solder ball)may be disposed in the openings, and in conductive contact with theconductive contacts 114. As shown in FIG. 1 and others of theaccompanying drawings, these openings in the surface insulation material104 may be tapered, narrowing towards the conductive contacts 114. Insome embodiments, the solder 106 on the conductive contacts 114 may befirst-level interconnects, while in other embodiments, non-solderfirst-level interconnects may be used to electrically couple theconductive contacts 114 to another component. As used herein, a“conductive contact” may refer to a portion of conductive material(e.g., one or more metals) serving as part of an interface betweendifferent components; although some of the conductive contacts discussedherein are illustrated in a particular manner in various ones of theaccompanying drawings, any conductive contacts may be recessed in, flushwith, or extending away from a surface of a component, and may take anysuitable form (e.g., a conductive pad or socket).

A bridge component 110 may be disposed in the cavity 120, and may becoupled to the substrate 102. This coupling may include electricalinterconnects or may not include electrical interconnects; in theembodiment of FIG. 1, the bridge component 110 is mechanically coupledto the dielectric material 112 of the substrate 102 by an adhesive 122(e.g., a die-attach film (DAF)) between the “bottom” face of the bridgecomponent 110 and the substrate 102, while other types of couplings aredescribed elsewhere herein. The bridge component 110 may includeconductive contacts 118 at its “top” face; as discussed below withreference to FIG. 2, these conductive contacts 118 may be used toelectrically couple the bridge component 110 to one or more othermicroelectronic components. The bridge component 110 may includeconductive pathways (e.g., including lines and vias, as discussed belowwith reference to FIG. 59) to the conductive contacts 118 (and/or toother circuitry included in the bridge component 110 and/or to otherconductive contacts of the bridge component 110, as discussed below). Insome embodiments, the bridge component 110 may include a semiconductormaterial (e.g., silicon); for example, the bridge component 110 may be adie 1502, as discussed below with reference to FIG. 58, and may includean integrated circuit (IC) device 1600, as discussed below withreference to FIG. 59. In some embodiments, the bridge component 110 maybe an “active” component in that it may contain one or more activedevices (e.g., transistors), while in other embodiments, the bridgecomponent 110 may be a “passive” component in that it does not containone or more active devices. The bridge component 110 may be manufacturedso as to permit a greater density of interconnects than the substrate102. Consequently, the pitch 202 of the conductive contacts 118 of thebridge component 110 may be less than the pitch 198 of the conductivecontacts 114 of the substrate 102. When multiple microelectroniccomponents are coupled to the bridge component 110 (e.g., as discussedbelow with reference to FIG. 2), these microelectronic components mayuse the electrical pathways through the bridge component 110 (and mayuse other circuitry within the bridge component 110, when present) toachieve a higher density interconnection between them, relative tointerconnections made via the conductive contacts 114 of the substrate102.

The dimensions of the elements of a microelectronic structure 100 maytake any suitable values. For example, in some embodiments, thethickness 138 of the metal lines of the conductive contacts 114 may bebetween 5 microns and 25 microns. In some embodiments, the thickness 128of the surface finish 116 may be between 5 microns and 10 microns (e.g.,7 microns of nickel and less than 100 nanometers of each of palladiumand gold). In some embodiments, the thickness 142 of the adhesive 122may be between 2 microns and 10 microns. In some embodiments, the pitch202 of the conductive contacts 118 of the bridge component 110 may beless than 70 microns (e.g., between 25 microns and 70 microns, between25 microns and 65 microns, between 40 microns and 70 microns, or lessthan 65 microns). In some embodiments, the pitch 198 of the conductivecontacts 114 may be greater than 70 microns (e.g., between 90 micronsand 150 microns). In some embodiments, the thickness 126 of the surfaceinsulation material 104 may be between 25 microns and 50 microns. Insome embodiments, the height 124 of the solder 106 above the surfaceinsulation material 104 may be between 25 microns and 50 microns. Insome embodiments, the thickness 140 of the bridge component 110 may bebetween 30 microns and 200 microns. In some embodiments, amicroelectronic structure 100 may have a footprint that is less than 100square millimeters (e.g., between 4 square millimeters and 80 squaremillimeters).

A microelectronic structure 100, like that of FIG. 1 and others of theaccompanying drawings, may be included in a larger microelectronicassembly. FIG. 2 illustrates an example of such a microelectronicassembly 150, which may include one or more microelectronic components130 having conductive contacts 134 coupled to the conductive contacts118 of the bridge component 110 (e.g., by solder 106 or anotherinterconnect structure) and conductive contacts 132 coupled to theconductive contacts 114 of the substrate 102 (e.g., by solder 106 oranother interconnect structure, as discussed above). FIG. 2 illustratestwo microelectronic components 130 (the microelectronic components 130-1and 130-2), but a microelectronic assembly 150 may include more or fewermicroelectronic components 130. Although FIG. 2 depicts themicroelectronic components 130-1/130-2 as substantially “covering” theproximate surface of the microelectronic structure 100, this is simplyan illustration, and need not be the case. Further, although FIGS. 1 and2 (and others of the accompanying drawings) depict microelectronicstructures 100/microelectronic assemblies 150 that include a singlebridge component 110 in a substrate 102, this is simply for ease ofillustration, and a microelectronic structure 100/microelectronicassembly 150 may include multiple bridge components 110 in a substrate102.

The microelectronic components 130 may include conductive pathways(e.g., including lines and vias, as discussed below with reference toFIG. 59) to the conductive contacts 132/134 (and/or to other circuitryincluded in the microelectronic component 130 and/or to other conductivecontacts of the microelectronic component 130, not shown). In someembodiments, a microelectronic component 130 may include a semiconductormaterial (e.g., silicon); for example, a microelectronic component 130may be a die 1502, as discussed below with reference to FIG. 58, and mayinclude an IC device 1600, as discussed below with reference to FIG. 59.In some embodiments, the microelectronic component 130 may be an“active” component in that it may contain one or more active devices(e.g., transistors), while in other embodiments, the microelectroniccomponent 130 may be a “passive” component in that it does not containone or more active devices. In some embodiments, for example, amicroelectronic component 130 may be a logic die. More generally, themicroelectronic components 130 may include circuitry to perform anydesired functionality. For example, one or more of the microelectroniccomponents 130 may be logic dies (e.g., silicon-based dies), and one ormore of the microelectronic components 130 may be memory dies (e.g.,high bandwidth memory). As discussed above with reference to FIG. 1,when multiple microelectronic components 130 are coupled to the bridgecomponent 110 (e.g., as shown in FIG. 2), these microelectroniccomponents 130 may use the electrical pathways through the bridgecomponent 110 (and may use other circuitry within the bridge component110, when present) to achieve a higher density interconnection betweenthem, relative to interconnections made via the conductive contacts 114of the substrate 102.

As used herein, a “conductive contact” may refer to a portion ofconductive material (e.g., metal) serving as an interface betweendifferent components; conductive contacts may be recessed in, flushwith, or extending away from a surface of a component, and may take anysuitable form (e.g., a conductive pad or socket).

In some embodiments, a mold material 144 may be disposed between themicroelectronic structure 100 and the microelectronic components 130,and may also be between the microelectronic components 130 and above themicroelectronic components 130 (not shown). In some embodiments, themold material 144 may include multiple different types of moldmaterials, including an underfill material between the microelectroniccomponents 130 and the microelectronic structure 100 and a differentmaterial disposed above and at side faces of the microelectroniccomponents 130. Example materials that may be used for the mold material144 include epoxy materials, as suitable.

The microelectronic assembly 150 also illustrates a surface insulationmaterial 104 at the “bottom” face of the substrate 102 (opposite to the“top” face), with tapered openings in the surface insulation material104 at the bottoms of which conductive contacts 206 are disposed. Solder106 may be disposed in these openings, in conductive contact with theconductive contacts 206. The conductive contacts 206 may also include asurface finish (not shown). In some embodiments, the solder 106 on theconductive contacts 206 may be second-level interconnects (e.g., solderballs for a ball grid array arrangement), while in other embodiments,non-solder second-level interconnects (e.g., a pin grid arrayarrangement or a land grid array arrangement) may be used toelectrically couple the conductive contacts 206 to another component.The conductive contacts 206/solder 106 (or other second-levelinterconnects) may be used to couple the substrate 102 to anothercomponent, such as a circuit board (e.g., a motherboard), an interposer,or another IC package, as known in the art and as discussed below withreference to FIG. 60. In embodiments in which the microelectronicassembly 150 includes multiple microelectronic components 130, themicroelectronic assembly 150 may be referred to as a multi-chip package(MCP). A microelectronic assembly 150 may include additional components,such as passive components (e.g., surface-mount resistors, capacitors,and inductors disposed at the “top” face or the “bottom” face of thesubstrate 102), active components, or other components.

FIGS. 3-10 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic assembly 150of FIG. 2, in accordance with various embodiments. Although theoperations of the process of FIGS. 3-10 (and the processes of others ofthe accompanying drawings, discussed below) may be illustrated withreference to particular embodiments of the microelectronic structures100/microelectronic assemblies 150 disclosed herein, the method 1000 maybe used to form any suitable microelectronic structures100/microelectronic assemblies 150. Operations are illustrated once eachand in a particular order in FIGS. 3-10, but the operations may bereordered and/or repeated as desired (e.g., with different operationsperformed in parallel when manufacturing multiple microelectronicstructures 100/microelectronic assemblies 150).

FIG. 3 illustrates an assembly that includes a preliminary substrate 102including dielectric material 112 and patterned conductive material 108.The assembly of FIG. 3 may be manufactured using conventional packagesubstrate manufacturing techniques (e.g., lamination of layers of thedielectric material 112, etc.), and may include layers up to N−1.

FIG. 4 illustrates an assembly subsequent to fabricating an additionalNth layer for the preliminary substrate 102 of FIG. 4. The assembly ofFIG. 4 includes the underlying metal of the conductive contacts 114. Theassembly of FIG. 4 may be manufactured using conventional packagesubstrate manufacturing techniques.

FIG. 5 illustrates an assembly subsequent to former a layer of surfaceinsulation material 104 on the assembly of FIG. 4.

FIG. 6 illustrates an assembly subsequent to patterning openings in thesurface insulation material 104 of the assembly of FIG. 5 to expose theunderlying metal of the conductive contacts 114, forming the surfacefinish 116 of the conductive contacts 114, and forming the cavity 120.In some embodiments, the openings in the surface insulation material 104(including the cavity 120) may be formed by mechanical patterning, laserpatterning, dry etch patterning, or lithographic patterning techniques.When a laser or mechanical patterning technique is used to form thecavity 120, the bottom of the cavity 120 may include undulations havingan amplitude between 1 micron and 10 microns; when a lithographicpatterning technique is used to form the cavity 120, the bottom of thecavity 120 may include undulations having an amplitude that is less than1 micron. In some embodiments in which the cavity 120 islaser-patterned, some edge roughness due to laser beam overlap may bepresent (e.g., with an amplitude between 1 micron and 25 microns).

FIG. 7 illustrates an assembly subsequent to performing a cleanoperation on the assembly of FIG. 6, and forming the solder 106 (e.g.,microballs) on the conductive contacts 114.

FIG. 8 illustrates an assembly subsequent to attaching the bridgecomponent 110 to the exposed dielectric material 112 of the cavity 120of the assembly of FIG. 7, using the adhesive 122. In some embodiments,the adhesive 122 may be a DAF, and attaching the bridge component 110may include performing a film cure operation. The assembly of FIG. 8 maytake the form of the microelectronic structure 100 of FIG. 1.

FIG. 9 illustrates an assembly subsequent to attaching themicroelectronic components 130 to the assembly of FIG. 8. In someembodiments, this attachment may include a thermocompression bonding(TCB) operation. In some embodiments, additional solder may be providedon the conductive contacts 118, the conductive contacts 132, and/or theconductive contacts 134 before the TCB operation.

FIG. 10 illustrates an assembly subsequent to providing the moldmaterial 144 to the assembly of FIG. 9. As noted above, in someembodiments, the mold material 144 of FIG. 10 may include multipledifferent materials (e.g., a capillary underfill material between themicroelectronic components 130 and the microelectronic structure 100,and a different material over the microelectronic components 130). Theassembly of FIG. 10 may take the form of the microelectronic assembly150 of FIG. 2. As discussed above, the mold material 144 may include anunderfill material (e.g., a capillary underfill material).

Various ones of FIGS. 3-57 illustrate example microelectronic structures100/microelectronic assemblies 105 having various features. The featuresof these microelectronic structures 100/microelectronic assemblies 150may be combined with any other features disclosed herein, as suitable,to form a microelectronic structure 100/microelectronic assembly 150.For example, any of the microelectronic structures 100 disclosed hereinmay be coupled to one or more microelectronic components 130 (e.g., asdiscussed above with reference to FIGS. 2-10) to form a microelectronicassembly 150, and any of the microelectronic assemblies 150 disclosedherein may be manufactured separately from their constituentmicroelectronic structures 100. A number of elements of FIGS. 1 and 2are shared with FIGS. 3-57; for ease of discussion, a description ofthese elements is not repeated, and these elements may take the form ofany of the embodiments disclosed herein.

A microelectronic structure 100 may include a cavity 120 that extendsthrough a surface insulation material 104 at a “top” face of thesubstrate 102 (e.g., as discussed above with reference to FIG. 1). Insome embodiments, the dielectric material 112 of the substrate 102 mayprovide the bottom of the cavity 120 (e.g., as discussed above withreference to FIG. 1), while in other embodiments, another material mayprovide a bottom of the cavity 120. For example, FIGS. 11 and 12illustrate a microelectronic structure 100 including a metal layer 146to which the bridge component 110 is coupled by adhesive 122. The metallayer 146 may extend up the (angled) side faces of the cavity 120, asshown in FIG. 11, or may be located only below the bridge component110/adhesive 122, as shown in FIG. 12. In some embodiments, the metallayer 146 may include aluminum (which may be sputtered onto an assemblylike that of FIG. 7) or a nickel-palladium-gold multilayer (which may bedeposited onto an assembly like that of FIG. 7 by an electrolessdeposition technique). In an embodiment like that of FIG. 12, theinitially deposited metal layer 146 may be patterned after attachment ofthe bridge component 110 to remove the metal layer 146 not shielded bythe bridge component 110/adhesive 122. In some embodiments, a thicknessof the metal layer 146 may be less than a thickness 138 of theunderlying metal of the conductive contacts 114, as shown. Inembodiments like those of FIGS. 11 and 12, the adhesive 122 may be anepoxy material. In some such embodiments, the epoxy adhesive 122 may bea ultraviolet (UV)-curable epoxy (also referred to as a “snap-curable”epoxy) that, upon exposure to UV radiation after deposition, quicklycross-links in place (without requiring a long thermal cure). The metallayer 146 may act as a reflective surface during this UV exposure,enabling a desired scattering and distribution of the UV radiation tofully cross-link the epoxy. The use of a UV-curable epoxy as theadhesive 122 may allow the bridge component 110 to be secured in placequickly so that the shift of the bridge component 110 that typicallyoccurs during subsequent processing operations may be mitigated oreliminated.

FIG. 13 illustrates another embodiment in which a microelectronicstructure 100 includes a metal to which the bridge component 110 iscoupled by adhesive 122; in FIG. 13, however, the metal is a metal pad148, coplanar with the underlying metal of the conductive contacts 114,and having a same thickness 138. In some such embodiments, the metal pad148 may present a roughened copper surface to which an adhesive 122(e.g., a DAF) may readily bond.

The microelectronic structures 100 of FIGS. 1 and 11-13 may allowmanufacturers to avoid expensive and complex manufacturing operationstypically required for high-density interconnect structures (e.g.,ultraviolet (UV) or carbon dioxide laser machining, first-levelinterconnect plating, etc.) and thus may speed development of newstructures and reduce cost.

In some embodiments, a microelectronic structure 100 may include acavity 120 that extends through a surface insulation material 104 at a“top” face of the substrate 102 and into the dielectric material 112 ofthe substrate 102. For example, FIGS. 14-16 illustrate microelectronicstructures 100 including cavities 120 that extend into the dielectricmaterial 112 and whose bottoms are provided by the conductive material108 (e.g., a metal in the N−1 layer). Further, FIGS. 14-16 illustratemicroelectronic structures 100 including a metal layer 146 to which thebridge component 110 is coupled by adhesive 122. The metal layer 146 mayextend up the (angled) side faces of the cavity 120, as shown in FIGS.14 and 15, or may be located only below the bridge component110/adhesive 122, as shown in FIG. 16. In some embodiments, the metallayer 146 may include aluminum (which may be sputtered onto an assemblylike that of FIG. 7), gold, or a nickel-palladium-gold multilayer (whichmay be deposited onto an assembly like that of FIG. 7 by an electrolessdeposition technique). In an embodiment like that of FIG. 16, theinitially deposited metal layer 146 may be patterned after attachment ofthe bridge component 110 to remove the metal layer 146 not shielded bythe bridge component 110/adhesive 122. In some embodiments, a thicknessof the metal layer 146 may be less than a thickness 138 of theunderlying metal of the conductive contacts 114, as shown. Inembodiments like those of FIGS. 14-16, as discussed above with referenceto FIGS. 11-12, the adhesive 122 may be an epoxy material (e.g., aUV-curable epoxy).

In the embodiment of FIG. 15, the adhesive 122 may include a peripheraladhesive 122-1 and a central adhesive 122-2. The peripheral adhesive122-1 may be a UV-curable epoxy, as discussed above, while the centraladhesive 122-2 may be a thermally cured epoxy. In the manufacture of themicroelectronic structure 100 of FIG. 15, the peripheral adhesive 122-1may be cured first by exposure to UV radiation (e.g., as discussed belowwith reference to FIGS. 17-25, and then the resulting assembly may besubject to a thermal treatment to cure the central adhesive 122-2. Asnoted above, the use of a UV-curable epoxy as (or as part of) theadhesive 122 may allow the bridge component 110 to be secured in placequickly so that the shift of the bridge component 110 that typicallyoccurs during subsequent processing operations may be mitigated oreliminated, dramatically improving the yield and ease of later assemblyoperations (e.g., attaching microelectronic components 130).

FIGS. 17-25 illustrate various stages in an example process for themanufacture of the microelectronic structure 100 of FIG. 14, inaccordance with various embodiments. FIG. 17 illustrates an assemblysubsequent to patterning openings in the surface insulation material 104of the assembly of FIG. 5 to expose the underlying metal of theconductive contacts 114. In some embodiments, the openings in thesurface insulation material 104 (including the cavity 120) may be formedby mechanical patterning, laser patterning, dry etch patterning, orlithographic patterning techniques.

FIG. 18 illustrates an assembly subsequent to applying a mask material158 over the assembly of FIG. 18. In some embodiments, the mask material158 may include a dry film resist (DFR) or a polyethylene terephthalate(PET) film, and may be laminated on.

FIG. 19 illustrates an assembly subsequent to forming the cavity 120 inthe assembly of FIG. 18. The cavity 120 may be formed through the maskmaterial 158, as shown, and any suitable technique may be used to formthe cavity 120 (e.g., laser drilling). Cleaning operations (e.g., watercleaning and/or plasma etch cleaning) may follow the formation of thecavity 120.

FIG. 20 illustrates an assembly subsequent to forming a metal layer 146on the assembly of FIG. 19. The metal layer 146 may include any of thematerials disclosed herein, and may be deposited using any suitabletechnique (e.g., aluminum deposited by sputtering).

FIG. 21 illustrates an assembly subsequent to removing the mask material158 from the assembly of FIG. 20, and consequently removing the portionof the metal layer 146 on the mask material 158. For example, when themask material 158 is a PET film, the mask material 158 may be peeledoff; when the mask material 158 is a DFR, the mask material 158 may bestripped.

FIG. 22 illustrates an assembly subsequent to depositing uncuredadhesive 156 on the metal layer 146 at the bottom of the cavity 120 ofthe assembly of FIG. 21. When multiple types of adhesives 122 are to beused (e.g., as discussed above with reference to FIG. 15, the multipletypes of uncured adhesive 156 may be deposited in a desired pattern.Alternately, a single type of uncured adhesive 156 (e.g., an uncuredperipheral adhesive 122-1) may be deposited initially, and another typeof uncured adhesive (e.g., an uncured center adhesive 122-2) may beprovided later (e.g., by capillary underfill after attachment of thebridge component 110).

FIG. 23 illustrates an assembly subsequent to using a bond head 152 tobring the bridge component 110 (along with solder 106 on the conductivecontacts 118) into contact with the uncured adhesive 156 of the assemblyof FIG. 22. When the bridge component 110 is properly positioned, UVsources 154 (e.g., a ring of light-emitting diodes (LEDs)) of the bondhead 152 may shine UV radiation on the uncured adhesive 156,cross-linking the uncured adhesive 156 and resulting in the adhesive122.

FIG. 24 illustrates an assembly subsequent to retracing the bond head152 and performing a thermal cure (e.g., at the panel level) of theassembly of FIG. 24.

FIG. 25 illustrates an assembly subsequent to forming the surface finish116 and the solder 106 (e.g., microballs) on the conductive contacts 114of FIG. 24. The resulting assembly may take the form of themicroelectronic structure 100 of FIG. 14.

Other manufacturing processes may be used to fabricate themicroelectronic structures 100 of FIGS. 14-16. For example, instead ofapplying a mask material 158 before the formation of the metal layer146, no mask material 158 may be used; instead, the metal layer 146 maybe formed after the cavity 120 is formed, and the excess metal layer 146may be removed after the bridge component 110 is attached and before thesolder 106 is provided (resulting in a microelectronic structure 100like that of FIG. 16). In another process, the solder 106 may beprovided after the cavity 120 is formed, but before the bridge component110 is attached; after the thermal cure of FIG. 24, the resultingassembly may be “flash etched” to remove the excess metal layer 146.Additionally, in some embodiments, a “bump flattening” operation may beperformed after formation of the solder 106; the assembly may be subjectto a controlled “downward” force at a controlled temperature to achievea desired height profile of the solder 106.

Other techniques may be used to control the stand-off between themicroelectronic structure 100 and the microelectronic components 130,instead of or in addition to the techniques utilizing a UV-curableadhesive 122 discussed above. For example, FIG. 26 is a side,cross-sectional view of an example microelectronic structure 100 thatincludes metal-cored solder balls 164 in contact with the conductivecontacts 114 (e.g., instead of solder only, as illustrated in some ofthe preceding drawings). A metal-cored solder ball 164 may include ametal ball 162 (e.g., including copper) that has a surface finish (e.g.,nickel, a nickel-palladium-gold multilayer, etc.) to mitigate corrosion,and a thin layer of solder 106 coating the metal ball 162. In someembodiments, the diameter of the metal ball 162 may be between 10microns and 300 microns (e.g., between 50 microns and 70 microns, orbetween 60 microns and 70 microns). In some embodiments, the thicknessof the layer of solder 106 on the metal ball 162 may be between 1microns and 15 microns; as shown in FIG. 26, after reflow of the solder106 of the metal-cored solder ball 164, the solder 106 may flow downtowards the conductive contact 114. As shown in FIG. 26, the metal ball162 may occupy the majority of the volume of the corresponding openingin the surface insulation material 104, and may extend above a topsurface of the surface insulation material 104.

FIGS. 27-28 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure 100of FIG. 26. FIG. 27 illustrates an assembly subsequent to printing alayer of flux 160 on the conductive contacts 114 of the assembly of FIG.6, and placing metal-cored solder balls 164 on the flux 160. FIG. 28illustrates an assembly subsequent to performing a solder reflow (anddeflux) to melt the solder 106 around the metal ball 162 of the assemblyof FIG. 27, and then attaching the bridge component 110 to the exposeddielectric material 112 of the cavity 120 using the adhesive 122,resulting in the microelectronic structure 100 of FIG. 26. Although asingle adhesive 122 is shown in FIGS. 26 and 28, and the cavity 120 isshown as having a particular depth and bottom material in FIGS. 26-28,any of the embodiments of these features disclosed herein may be used.The small volume of solder 106 included in the metal-cored solder balls164 may result in little change of the height or profile of themetal-cored solder balls 164 after the solder reflow operation. FIGS.26-28 also illustrate solder 106 on the conductive contacts 118 of thebridge component 110; in some embodiments, this solder 106 (e.g., atin-based solder) may be microbumps provided on the bridge component 110prior to attachment of the bridge component 110 to the substrate 102.Attachment of the microelectronic components 130 (e.g., as discussedabove with reference to FIGS. 2-10) may then be performed on themicroelectronic structure 100 of FIG. 25, aided by the predictableheight of the metal-cored solder balls 164 and the solid “backstop” theyprovide.

FIGS. 29 and 32 illustrate further techniques may be used to control thestand-off between the microelectronic structure 100 and themicroelectronic components 130, instead of or in addition to thetechniques utilizing a UV-curable adhesive 122 discussed above. FIG. 29is a side, cross-sectional view of an example microelectronic structure100 that includes multi-melting point solder balls 170 in contact withthe conductive contacts 114. A multi-melting point solder ball 170 mayinclude a core of high-temperature solder 168 and a thin layer oflow-temperature solder 166 coating the high-temperature solder 168. Asused herein, the terms “high-temperature solder” and “low-temperaturesolder” are used relatively; a high-temperature solder 168 has a highermelting point than a low-temperature solder 166. In some embodiments, ahigh-temperature solder 168 may have a melting point that is greaterthan 200 degrees Celsius (e.g., between 220 degrees Celsius and 300degrees Celsius), while a low-temperature solder 166 may have a meltingpoint that is less than 200 degrees Celsius (e.g., between 112 degreesCelsius and 190 degrees Celsius). Other combinations may be used (e.g.,a high-temperature solder 168 with a melting point of 189 degreesCelsius and a low-temperature solder 166 with a melting point of 117degrees Celsius, or a high-temperature solder 168 with a melting pointof 300 degrees Celsius and a low-temperature solder 166 with a meltingpoint of 230 degrees Celsius). In some embodiments, a high-temperaturesolder 168 may include tin, silver, or antimony, and a low-temperaturesolder 166 may include indium, bismuth, zinc, or lead. As shown in FIG.29, after reflow of the low-temperature solder 166 of the multi-meltingpoint solder balls 170, the low-temperature solder 166 may flow downtowards the conductive contact 114. As shown in FIG. 29, thehigh-temperature solder 168 may occupy the majority of the volume of thecorresponding opening in the surface insulation material 104, and mayextend above a top surface of the surface insulation material 104.Although FIG. 29 (and FIG. 31, discussed below) illustrate thehigh-temperature solder 168 as retaining a spherical shape, this issimply illustrative, and the high-temperature solder 168 may take any ofa number of forms. If the high-temperature solder 168 does not undergoreflow during subsequent manufacturing operations, the high-temperaturesolder 168 may retain a spherical shape or may look like a “flattened”sphere with flatter faces at the bottom (proximate to the conductivecontacts 114) and the top (proximate to the conductive contacts 132 of amicroelectronic component 130, not shown). The “flattened” sphere ofhigh-temperature solder 168 may remain close to the conductive contacts114 or may float in the solder joint; if the high-temperature solder 168floats in the solder joint, the orientation of the sphere may change. Ifthe high-temperature solder 168 does undergo reflow during subsequentmanufacturing operations, the high-temperature solder 168 may form agradient with the low-temperature solder 166 (with more low-temperaturesolder 166 closer to the conductive contacts 114) or thehigh-temperature solder 168 may mix more thoroughly with thelow-temperature solder 166.

FIGS. 30-31 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure 100of FIG. 29. FIG. 30 illustrates an assembly subsequent to printing alayer of flux 160 on the conductive contacts 114 of the assembly of FIG.6, and placing multi-melting point solder balls 170 on the flux 160.FIG. 31 illustrates an assembly subsequent to performing a(low-temperature) solder reflow (and deflux) to melt the low-temperaturesolder 166 around the core of high-temperature solder 168 of theassembly of FIG. 30, and then attaching the bridge component 110 to theexposed dielectric material 112 of the cavity 120 using the adhesive122, resulting in the microelectronic structure 100 of FIG. 29. Althougha single adhesive 122 is shown in FIGS. 29 and 31, and the cavity 120 isshown as having a particular depth and bottom material in FIGS. 29-31,any of the embodiments of these features disclosed herein may be used.The small volume of low-temperature solder 166 included in themulti-melting point solder balls 170 may result in little change of theheight or profile of the multi-melting point solder balls 170 after thesolder reflow operation. FIGS. 29-31 also illustrate solder 106 on theconductive contacts 118 of the bridge component 110; in someembodiments, this solder 106 (e.g., a tin-based solder) may bemicrobumps provided on the bridge component 110 prior to attachment ofthe bridge component 110 to the substrate 102. Attachment of themicroelectronic components 130 (e.g., as discussed above with referenceto FIGS. 2-10) may then be performed on the microelectronic structure100 of FIG. 29, aided by the predictable height of the multi-meltingpoint solder balls 170 and the solid “backstop” they provide.

FIG. 32 is a side, cross-sectional view of an example microelectronicstructure 100 that includes metal posts 172 (e.g., copper posts) incontact with the conductive contacts 114. A surface finish 116 may bedisposed at the top face of the metal posts 172, as shown. As shown inFIG. 32, the metal posts 172 may largely fill the corresponding openingsin the surface insulation material 104, and may extend above a topsurface of the surface insulation material 104. In some embodiments, themetal posts 172 may extend above the top surface of the surfaceinsulation material 104 by a distance 176 between 20 microns and 30microns. In some embodiments the metal posts 172 may be undercutrelative to the surface finish 116, as shown in FIG. 32.

FIGS. 33-34 are side, cross-sectional views of various stages in anexample process for the manufacture of the microelectronic structure 100of FIG. 32. FIG. 33 illustrates an assembly subsequent to depositing andpatterning a layer of surface insulation material 174 (e.g., aphotoresist) on the assembly of FIG. 6. The surface insulation material174 may be patterned with openings corresponding to the desiredlocations for the metal posts 172. FIG. 34 illustrates an assemblysubsequent to plating a metal (e.g., copper) on the assembly of FIG. 33to form the metal posts 172, forming the surface finish 116, and thenstripping the surface insulation material 174 (and performing a seedetch to remove the metal seed layer used for the plating operation).Subsequently, the bridge component 110 may be attached to the exposeddielectric material 112 of the cavity 120 of the assembly of FIG. 34using the adhesive 122, resulting in the microelectronic structure 100of FIG. 32. Although a single adhesive 122 is shown in FIG. 32, and thecavity 120 is shown as having a particular depth and bottom material inFIGS. 32-34, any of the embodiments of these features disclosed hereinmay be used. FIGS. 33-34 also illustrate solder 106 on the conductivecontacts 118 of the bridge component 110; in some embodiments, thissolder 106 (e.g., a tin-based solder) may be microbumps provided on thebridge component 110 prior to attachment of the bridge component 110 tothe substrate 102. Attachment of the microelectronic components 130(e.g., as discussed above with reference to FIGS. 2-10) may then beperformed on the microelectronic structure 100 of FIG. 32, with solderprovided on the conductive contacts 132 of the microelectroniccomponents 130 to couple the conductive contacts 132 to the metal posts172, aided by the predictable height of the metal posts 172 and thesolid “backstop” they provide.

Although various ones of the drawings herein illustrate the substrate102 as a coreless substrate (e.g., having vias that all taper in thesame direction), any of the substrates 102 disclosed herein may be coredsubstrates 102. For example, FIG. 35 illustrates a microelectronicstructure 100 having similar features to the microelectronic structureof FIG. 32, but having a substrate 102 having a core 178 (through whichconductive pathways, not shown, may extend). As shown in FIG. 35, acored substrate 102 may include vias that taper towards the core 178(and thus taper in opposite directions at opposite sides of the core178).

Other techniques may be used to control the stand-off between themicroelectronic structure 100 and the microelectronic components 130,instead of or in addition to the techniques utilizing a UV-curableadhesive 122 and/or the techniques utilizing various interconnectarrangements on the conductive contacts 114 of the substrate 102,discussed above. For example, FIGS. 36-41 illustrate exploded views ofexample microelectronic assemblies 150 including arrangements ofhigh-temperature solder 168 and low-temperature solder 166 to controlstand-off, in accordance with various embodiments. In themicroelectronic assembly 150 of FIG. 36, high-temperature solder 168 maybe disposed on the conductive contacts 114 of the substrate 102, and ahigh-temperature solder 168 may be disposed between a low-temperaturesolder 166 and the conductive contacts 132/134 of the microelectroniccomponents 130. In some embodiments, the low-temperature solder 166 maybe plated on top of the high-temperature solder 168 on the conductivecontacts 132/134. When the microelectronic components 130 are broughtinto contact with the microelectronic structure 100 (e.g., during a TCBoperation, as discussed herein), only the low-temperature solder 166 maybe molten, which may provide taller overall solder height on theconductive contacts 132/134 without side wicking of the solder. Thepresence of the high-temperature solder 168 on the conductive contacts134 may allow the microelectronic components 130 to make a hard stop onthe bridge component 110, if desired, and the volume of low-temperaturesolder 166 that will contact the conductive contacts 118 may be selectedto achieve a desired solder height. More generally, the high-temperaturesolder 168 in the microelectronic assembly 150 of FIG. 36 may serve as asolder stand-off to improve reliability during manufacturing.

In the microelectronic assembly 150 of FIG. 37, low-temperature solder166 may be disposed on the conductive contacts 114 of the substrate 102,and a high-temperature solder 168 may be disposed between alow-temperature solder 166 and the conductive contacts 132/134 of themicroelectronic components 130. In some embodiments, the low-temperaturesolder 166 may be plated on top of the high-temperature solder 168 onthe conductive contacts 132/134. When the microelectronic components 130are brought into contact with the microelectronic structure 100 (e.g.,during a TCB operation, as discussed herein), only the low-temperaturesolder 166 may be molten, which may provide taller overall solder heighton the conductive contacts 132/134 without side wicking of the solder.As discussed above with reference to FIG. 36, the presence of thehigh-temperature solder 168 on the conductive contacts 134 may allow themicroelectronic components 130 to make a hard stop on the bridgecomponent 110, if desired, and the volume of low-temperature solder 166that will contact the conductive contacts 118 may be selected to achievea desired solder height. The low-temperature solder 166 on theconductive contacts 134 may provide a higher collapse window on theinterconnects to the conductive contacts 134 during manufacturing.

In the microelectronic assembly 150 of FIG. 38, high-temperature solder168 may be disposed on the conductive contacts 114 of the substrate 102,high-temperature solder 168 may be disposed on the conductive contacts132 of the microelectronic components 130, and a high-temperature solder168 may be disposed between a low-temperature solder 166 and theconductive contacts 134 of the microelectronic components 130. In someembodiments, the low-temperature solder 166 may be plated on top of thehigh-temperature solder 168 on the conductive contacts 134. When themicroelectronic components 130 are brought into contact with themicroelectronic structure 100 (e.g., during a TCB operation, asdiscussed herein), only the low-temperature solder 166 may be molten,which may provide taller overall solder height on the conductivecontacts 134 without side wicking of the solder. The high-temperaturesolder 168 may be molten after the bumps of the low-temperature solder166 have collapsed so as to interfere minimally or not at all with thebonding of the low-temperature solder 166. The presence of thehigh-temperature solder 168 on the conductive contacts 134 may allow themicroelectronic components 130 to make a hard stop on the bridgecomponent 110, if desired, and the volume of low-temperature solder 166that will contact the conductive contacts 118 may be selected to achievea desired solder height.

As noted above, in some embodiments, the bridge component 110 mayinclude conductive contacts other than the conductive contacts 118 atits “top” face; for example, the bridge component 110 may includeconductive contacts 182 at its “bottom” face, as shown in FIGS. 39-57.The conductive contacts 182 of the bridge component 110 may beconductively coupled to conductive contacts 180 at the bottom of thecavity 120 of the substrate 102 (e.g., by solder 106 or another type ofinterconnect). In some embodiments, the conductive contacts 180 may beat the bottom of corresponding cavities in the dielectric material 112,as shown. The conductive contacts 180 may include a surface finish 116at their exposed surfaces, as shown. Direct electrical connectionsbetween the substrate 102 and the bridge component 110 (i.e., electricalconnections that do not go through a microelectronic component 130) mayenable direct power and/or input/output (I/O) pathways between thesubstrate 102 and the bridge component 110, which may result in powerdelivery benefits and/or signal latency benefits. In some embodiments,the pitch of the conductive contacts 182 may be between 40 microns and 1millimeter (e.g., between 40 microns and 50 microns, or between 100microns and 1 millimeter). In embodiments in which the bridge component110 includes conductive contacts 182 at its “bottom” face to couple toconductive contacts 180 at the bottom of the cavity 120 of the substrate102, a dielectric material (e.g., a capillary underfill material) maysupport these connections; such a material is not shown in various onesof the accompanying drawings for clarity of illustration.

Any of the preceding embodiments may be combined with a bridge component110 having conductive contacts 118 and conductive contacts 182 atopposing faces. For example, FIG. 39 illustrates an embodiment in whichthe conductive contacts 182 are coupled to the substrate 102 by solder.In particular, in the microelectronic assembly 150 of FIG. 39,high-temperature solder 168 may be disposed on the conductive contacts114 of the substrate 102, a high-temperature solder 168 may be disposedbetween a low-temperature solder 166 and the conductive contacts 132/134of the microelectronic components 130 (similar to the embodiment of FIG.36), and a high-temperature solder 168 may be disposed between theconductive contacts 182 of the bridge component 110 and the conductivecontacts 180 in the cavity 120 of the substrate 102. In someembodiments, the low-temperature solder 166 may be plated on top of thehigh-temperature solder 168 on the conductive contacts 132/134. When themicroelectronic components 130 are brought into contact with themicroelectronic structure 100 (e.g., during a TCB operation, asdiscussed herein), only the low-temperature solder 166 may be molten,which may allow the bridge component 110 to stay rigidly in place duringattachment of the microelectronic components 130. The presence of thehigh-temperature solder 168 on the conductive contacts 134 may allow themicroelectronic components 130 to make a hard stop on the bridgecomponent 110, if desired, and the volume of low-temperature solder 166that will contact the conductive contacts 118 may be selected to achievea desired solder height.

In the microelectronic assembly 150 of FIG. 40, low-temperature solder166 may be disposed on the conductive contacts 114 of the substrate 102,a high-temperature solder 168 may be disposed between a low-temperaturesolder 166 and the conductive contacts 132/134 of the microelectroniccomponents 130 (similar to the embodiment of FIG. 37), and ahigh-temperature solder 168 may be disposed between the conductivecontacts 182 of the bridge component 110 and the conductive contacts 180in the cavity 120 of the substrate 102. In some embodiments, thelow-temperature solder 166 may be plated on top of the high-temperaturesolder 168 on the conductive contacts 132/134. When the microelectroniccomponents 130 are brought into contact with the microelectronicstructure 100 (e.g., during a TCB operation, as discussed herein), onlythe low-temperature solder 166 may be molten, which may allow the bridgecomponent 110 to stay rigidly in place during attachment of themicroelectronic components 130. As discussed, the presence of thehigh-temperature solder 168 on the conductive contacts 134 may allow themicroelectronic components 130 to make a hard stop on the bridgecomponent 110, if desired, and the volume of low-temperature solder 166that will contact the conductive contacts 118 may be selected to achievea desired solder height. The low-temperature solder 166 on theconductive contacts 134 may provide a higher collapse window on theinterconnects to the conductive contacts 134 during manufacturing.

In the microelectronic assembly 150 of FIG. 41, high-temperature solder168 may be disposed on the conductive contacts 114 of the substrate 102,high-temperature solder 168 may be disposed on the conductive contacts132 of the microelectronic components 130, a high-temperature solder 168may be disposed between a low-temperature solder 166 and the conductivecontacts 134 of the microelectronic components 130 (similar to theembodiment of FIG. 38), and a high-temperature solder 168 may bedisposed between the conductive contacts 182 of the bridge component 110and the conductive contacts 180 in the cavity 120 of the substrate 102.In some embodiments, the low-temperature solder 166 may be plated on topof the high-temperature solder 168 on the conductive contacts 134. Whenthe microelectronic components 130 are brought into contact with themicroelectronic structure 100 (e.g., during a TCB operation, asdiscussed herein), only the low-temperature solder 166 may be molten,which may allow the bridge component 110 to stay rigidly in place duringattachment of the microelectronic components 130. The high-temperaturesolder 168 may be molten after the bumps of the low-temperature solder166 have collapsed so as to interfere minimally or not at all with thebonding of the low-temperature solder 166. The presence of thehigh-temperature solder 168 on the conductive contacts 134 may allow themicroelectronic components 130 to make a hard stop on the bridgecomponent 110, if desired, and the volume of low-temperature solder 166that will contact the conductive contacts 118 may be selected to achievea desired solder height.

Although the conductive contacts 180 of FIGS. 39-41 have beenillustrated as having a substantially planar surface facing the bridgecomponent 110, in other embodiments, the conductive contacts 180 mayhave a non-planar surface. Such embodiments may allow the spacingbetween the bridge component 110 and the substrate 102 to be adjustedduring manufacturing, and thereby make it easier to achieve a desiredoffset distance between a top face of the bridge component 110 and a topface of the substrate 102 to facilitate attachment of themicroelectronic components 130. For example, FIGS. 42-44 illustratemicroelectronic structures in which the conductive contacts 180 have aplanar portion 180A and a non-planar portion 180B. The planar portions180A may be exposed pads of a metal layer in the substrate 102 (e.g.,the N−1 layer or another layer) and the non-planar portions 180B may beplaced or otherwise formed on the planar portions 180A. The non-planarportions 180B may have a same material composition as the planarportions 180A, or may have different material compositions. In someembodiments, the non-planar portions 180B may include copper or gold. Insome embodiments, the conductive contacts 180 (planar or non-planar) mayspan multiple bridge components 110 in contact with a commonmicroelectronic component 130.

In the embodiment of FIG. 42, the non-planar portions 180B have anarcuate shape, and may include multiple wire segments shaped into arcswith the ends of the wires secured (e.g., wirebonded) to the planarportions 180A (e.g., forming a dome of wires). In the embodiment of FIG.43, the non-planar portions 180B have a pointed shape, with the pointfacing the bridge component 110. Such a pointed shape may be formed byball bonding a bond wire to the planar portion 180A, and cutting thebond wire to a desired length. In the embodiment of FIG. 44, thenon-planar portions 180B have an extended “S” shape, forming acantilever over the planar portions 180A. Such a cantilever may beformed by stitch bonding a bond wire to the planar portion 180A, andthen cutting the bond wire to a desired length. Lithographic techniquesmay be used instead of or in addition to the wirebonding techniquesdescribed herein to form the non-planar portions 180B. In embodiments inwhich a conductive contact 180 includes a non-planar portion 180B,solder 106 (as shown in FIGS. 42-44) or another interconnect structuremay conductive couple the non-planar portion 180B and the conductivecontact 182 of the bridge component 110, and the shapes of thenon-planar portions 180B may allow the z-height of the bridge component110 in the microelectronic structure to be adjusted during manufacturingto achieve a desired relative positioning of the bridge component 110and the substrate 102.

FIGS. 45-47 illustrate additional examples of microelectronic assemblies150 in which solder having different melting points may be used toimprove the ease of manufacturing and the reliability of theinterconnections between the elements in a microelectronic assembly 150.For example, FIG. 45 illustrates an embodiment in which low-temperaturesolder 166 is disposed on the conductive contacts 116/180 of thesubstrate 102, low-temperature solder 166 is disposed on the conductivecontacts 132/134 of the microelectronic components 130, and ahigh-temperature solder 168 is disposed on the conductive contacts 118of the bridge component 110. As discussed above, the hierarchy of soldermelting temperatures in such a microelectronic assembly 150 may enableselective melting of the solder. For example, utilizing alow-temperature solder 166 on the “bottom” side of the bridge component110 may allow TCB attachment of the bridge component 110 to thesubstrate 102 by applying heat from the “top” side or the “bottom” side.Heating the microelectronic structure 100 from the “bottom” side mayheat this low-temperature solder 166 more, and thus may be less likelyto melt or soften the high-temperature solder 168 at the “top” side ofthe bridge component 110. Such selective melting of the solder may allowa TCB bond head to contact the high-temperature solder 168 on a “top”face of the bridge component 110 to melt the low-temperature solder 166at the “bottom” face of the bridge component 110 without undesirablyattaching the bridge component 110 to the TCB bond head with meltedsolder.

FIG. 46 illustrates an embodiment similar to that of FIG. 45, but inwhich a polymer material 186 (e.g., a joint reinforcement paste) isdisposed around the low-temperature solder 166 between the bridgecomponent 110 and the substrate 102. The use of such a polymer material186 may help “freeze” the coupling between the bridge component 110 andthe substrate 102 in place, easing subsequent manufacturing operations.

FIG. 47 illustrates another embodiment similar to that of FIG. 45, butin which adhesive dots 190 (e.g., dots of a cured epoxy) are disposedbetween the “bottom” face of the bridge component 110 and the dielectricmaterial 112 of the substrate 102. These adhesive dots 190 may bedistributed around the low-temperature solder 166, and may be usedinstead of or in addition to the polymer material 186 (discussed abovewith reference to FIG. 46) to “freeze” the coupling between the bridgecomponent 110 and the substrate 102 in place, easing subsequentmanufacturing operations.

In some embodiments, non-solder materials may be used to conductivelycouple the bridge component 110 and the substrate 102. For example, FIG.48 illustrates an embodiment in which a conductive adhesive 184 is usedto conductively couple the conductive contacts 182 of the bridgecomponent 110 to the conductive contacts 180 of the substrate 102. Insome embodiments, the conductive adhesive 184 may include a polymer anda conductive filler (e.g., a metal, such as silver, or a conductivepolymer), and may be cured to “freeze” the coupling between the bridgecomponent 110 and the substrate 102.

In some embodiments, the solder materials used to couple the bridgecomponent 110 and the substrate 102 may be selected so as to “freeze”the coupling in place for subsequent manufacturing operations. FIG. 49illustrates an embodiment in which an intermetallic compound (IMC) ortransient liquid phase sintering (TLPS) material 188 is used toconductively couple the conductive contacts 182 of the bridge component110 to the conductive contacts 180 of the substrate 102. In embodimentsin which the material 188 is an IMC material, the bridge component 110may be soldered to the substrate 102 using a solder chemistry in whichthe initial solder material is quickly converted into a IMC. In someembodiments, such a solder chemistry may include a mix oflow-temperature solder particles and high-temperature solder particlessuspended in a flux and an epoxy carrier. In embodiments in which thematerial 188 is a TLPS material, a low-temperature sinterable material(e.g., a copper-tin polymer material having a peak reflow temperature of220 degrees Celsius) may be heated between the conductive contacts 182and the conductive contacts 180, forming a strong metallic bond thatwill not reflow during subsequent assembly operations. A TLPS material188 may have a distinct sintered structure with epoxy and IMC trapped ininternal pockets.

In some embodiments including conductive contacts 180 in a cavity 120 ofa substrate 102, the conductive contacts 180 may or may not be locatedat the “deepest” points in the cavity 120. Such embodiments mayadvantageously provide greater volume between the bridge component 110and the substrate 102, providing a large enough “chip gap” to allow anunderfill material to be used between the bridge component 110 and thesubstrate 102. For example, FIG. 50 illustrates an embodiment in whichthe conductive contacts 180 are located in the N−1 layer, and the cavity120 extends down to the N−2 layer. In some such embodiments, the metalin the N−1 and N−2 layers together may provide a laser stop for a laserdrill used to form the cavity 120, and thus some portions of the cavity120 may extend down the N−2 layer. FIG. 51 illustrates an embodimentsimilar to that of FIG. 50, but in which the conductive contacts 180 arelocated in the N−2 layer, and some of the bottom surface of the cavity120 is provided by metal in the N−1 layer. Again, as discussed withreference to FIG. 50, in some embodiments like that of FIG. 51, themetal in the N−1 and N−2 layers together may provide a laser stop for alaser drill used to form the cavity 120, and thus some portions of thecavity 120 may extend down the N−2 layer. The metal of the N−1 layerclosest to a conductive contact 180 may provide a ring around thatconductive contact 180 so as to avoid an undesirable electrical short ifthe solder 106 on the conductive contact 180 contacts the nearest N−1metal.

FIG. 52 illustrates an embodiment in which, like the embodiment of FIG.51, the conductive contacts 180 are located in the N−2 layer, but someof the bottom surface of the cavity 120 is provided by the dielectricmaterial 112 underlying the N−1 layer. A substrate 102 like that of FIG.52 may be fabricated by providing a solid metal portion in the area ofthe cavity 120 in the N−1 layer (as part of the initial substratemanufacturing process), and performing an initial cavity formation stepby laser drilling and stopping on this solid metal portion; the solidmetal portion may then be removed (e.g., by etch, and possibly leavingsome of the peripheral metal of the solid metal portion behind, as shownin FIG. 52), and then a second cavity formation step of laser drillingmay be performed to expose the conductive contacts 180 in the N−2 layer.

FIG. 53 illustrates another embodiment in which the conductive contacts180 are located in a metal layer below the N layer (e.g., the N−1 layer,as shown), and some of the bottom surface of the cavity 120 is providedby the dielectric material 112. In contrast to the embodiment of FIG.52, the dielectric material 112 at the bottom of the cavity 120 is thedielectric material 112 underlying the metal layer in which theconductive contacts 180 are disposed (i.e., the top surface of thedielectric material 112 at the bottom of the cavity 120 is coplanar withthe bottom surface of the conductive contacts 180). FIGS. 54-55 areside, cross-sectional views of various stages in an example process forthe manufacture of the microelectronic structure of FIG. 53. FIG. 54illustrates an assembly subsequent to laser drilling into the assemblyof FIG. 7, stopping at a solid metal portion in the area of the cavity120 in the N−1 layer (as part of the initial substrate manufacturingprocess). FIG. 55 illustrates an assembly subsequent to performing apatterned etch of some of the solid metal portion of FIG. 54, with theremaining metal providing the conductive contacts 180. A bridgecomponent 110 may then be attached to the assembly of FIG. 55 to form amicroelectronic structure 100, and microelectronic components 130 may becoupled to the microelectronic structure 100 to form the microelectronicassembly 150 of FIG. 53.

FIG. 56 illustrates another embodiment in which the conductive contacts180 are located in a metal layer below the N layer (e.g., the N−1 layer,as shown), and some of the bottom surface of the cavity 120 is providedby the dielectric material 112. In contrast to the embodiment of FIG.53, the top surface of the dielectric material 112 at the bottom of thecavity 120 is coplanar with the top surface of the conductive contacts180). An embodiment like that of FIG. 56 may also include a metal ring192, coplanar with the conductive contacts 180, proximate to the edgesof the cavity 120, as shown. A substrate 102 like that of FIG. 56 may befabricated by providing the conductive contacts 180 and the metal ring192 in the N−1 layer (as part of the initial substrate manufacturingprocess), and putting a sacrificial film over the area on the N−1 layercorresponding to the cavity 120; after completion of the initialsubstrate 102, a ring corresponding to the edges of the cavity 120 maybe laser drilled, stopping on the metal ring 192, and the sacrificialfilm (now exposed at its edges) may be released and any material abovethe sacrificial film may be removed.

Although various ones of the embodiments disclosed herein have beenillustrated for embodiments in which the conductive contacts 118 at the“top” face of the bridge component 110 are exposed in themicroelectronic structure 100 (i.e., an “open cavity” arrangement), anysuitable ones of the embodiments disclosed herein may be utilized inembodiments in which additional layers of the substrate 102 are built upover the bridge component 110, enclosing the bridge component 110 (i.e.,an “embedded” arrangement). For example, FIG. 57 illustrates amicroelectronic assembly 150 like that of FIG. 50, but in whichadditional dielectric material 112 and metal layers are disposed “above”the bridge component 110. As shown in FIG. 57, conductive pads and viasthrough this “additional” material may be used to allow microelectroniccomponents 130 to conductively couple to the conductive contacts 118 viathe intervening material of the substrate 102. Similarly, any suitableones of the embodiments disclosed herein may be utilized in such anembedded arrangement.

The microelectronic structures 100 and microelectronic assemblies 150disclosed herein may be included in any suitable electronic component.FIGS. 58-61 illustrate various examples of apparatuses that may includeany of the microelectronic structures 100 and microelectronic assemblies150 disclosed herein, or may be included in microelectronic structures100 and microelectronic assemblies 150 disclosed herein, as appropriate.

FIG. 58 is a top view of a wafer 1500 and dies 1502 that may be includedin any of the microelectronic structures 100 and microelectronicassemblies 150 disclosed herein. For example, a die 1502 may be includedin a microelectronic structure 100/microelectronic assembly 150 as (orpart of) a bridge component 110 and/or a microelectronic component 130.The wafer 1500 may be composed of semiconductor material and may includeone or more dies 1502 having IC structures formed on a surface of thewafer 1500. Each of the dies 1502 may be a repeating unit of asemiconductor product that includes any suitable IC. After thefabrication of the semiconductor product is complete, the wafer 1500 mayundergo a singulation process in which the dies 1502 are separated fromone another to provide discrete “chips” of the semiconductor product.The die 1502 may include one or more one or more transistors (e.g., someof the transistors 1640 of FIG. 59, discussed below), one or morediodes, and/or supporting circuitry to route electrical signals to thetransistors, as well as any other IC components. In some embodiments, adie 1502 may be a “passive” die in that it includes no active components(e.g., transistors), while in other embodiments, a die 1502 may be an“active” die in that it includes active components. In some embodiments,the wafer 1500 or the die 1502 may include a memory device (e.g., arandom access memory (RAM) device, such as a static RAM (SRAM) device, amagnetic RAM (MRAM) device, a resistive RAM (RRAM) device, aconductive-bridging RAM (CBRAM) device, etc.), a logic device (e.g., anAND, OR, NAND, or NOR gate), or any other suitable circuit element.Multiple ones of these devices may be combined on a single die 1502. Forexample, a memory array formed by multiple memory devices may be formedon a same die 1502 as a processing device (e.g., the processing device1802 of FIG. 61) or other logic that is configured to store informationin the memory devices or execute instructions stored in the memoryarray.

FIG. 59 is a side, cross-sectional view of an IC device 1600 that may beincluded in a microelectronic structure 100 and/or a microelectronicassembly 150. For example, an IC device 1600 may be included in amicroelectronic structure 100/microelectronic assembly 150 as (or partof) a bridge component 110 and/or a microelectronic component 130. An ICdevice 1600 may be part of a die 1502 (e.g., as discussed above withreference to FIG. 58). One or more of the IC devices 1600 may beincluded in one or more dies 1502 (FIG. 58). The IC device 1600 may beformed on a substrate 1602 (e.g., the wafer 1500 of FIG. 58) and may beincluded in a die (e.g., the die 1502 of FIG. 58). The substrate 1602may be a semiconductor substrate composed of semiconductor materialsystems including, for example, n-type or p-type materials systems (or acombination of both). The substrate 1602 may include, for example, acrystalline substrate formed using a bulk silicon or asilicon-on-insulator (SOI) substructure. In some embodiments, thesubstrate 1602 may be formed using alternative materials, which may ormay not be combined with silicon, that include but are not limited togermanium, indium antimonide, lead telluride, indium arsenide, indiumphosphide, gallium arsenide, or gallium antimonide. Further materialsclassified as group II-VI, III-V, or IV may also be used to form thesubstrate 1602. Although a few examples of materials from which thesubstrate 1602 may be formed are described here, any material that mayserve as a foundation for an IC device 1600 may be used. The substrate1602 may be part of a singulated die (e.g., the dies 1502 of FIG. 58) ora wafer (e.g., the wafer 1500 of FIG. 58).

The IC device 1600 may include one or more device layers 1604 disposedon the substrate 1602. The device layer 1604 may include features of oneor more transistors 1640 (e.g., metal oxide semiconductor field-effecttransistors (MOSFETs)) formed on the substrate 1602. The device layer1604 may include, for example, one or more source and/or drain (S/D)regions 1620, a gate 1622 to control current flow in the transistors1640 between the S/D regions 1620, and one or more S/D contacts 1624 toroute electrical signals to/from the S/D regions 1620. The transistors1640 may include additional features not depicted for the sake ofclarity, such as device isolation regions, gate contacts, and the like.The transistors 1640 are not limited to the type and configurationdepicted in FIG. 59 and may include a wide variety of other types andconfigurations such as, for example, planar transistors, non-planartransistors, or a combination of both. Planar transistors may includebipolar junction transistors (BJT), heterojunction bipolar transistors(HBT), or high-electron-mobility transistors (HEMT). Non-planartransistors may include FinFET transistors, such as double-gatetransistors or tri-gate transistors, and wrap-around or all-around gatetransistors, such as nanoribbon and nanowire transistors.

Each transistor 1640 may include a gate 1622 formed of at least twolayers, a gate dielectric and a gate electrode. The gate dielectric mayinclude one layer or a stack of layers. The one or more layers mayinclude silicon oxide, silicon dioxide, silicon carbide, and/or a high-kdielectric material. The high-k dielectric material may include elementssuch as hafnium, silicon, oxygen, titanium, tantalum, lanthanum,aluminum, zirconium, barium, strontium, yttrium, lead, scandium,niobium, and zinc. Examples of high-k materials that may be used in thegate dielectric include, but are not limited to, hafnium oxide, hafniumsilicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconiumoxide, zirconium silicon oxide, tantalum oxide, titanium oxide, bariumstrontium titanium oxide, barium titanium oxide, strontium titaniumoxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, andlead zinc niobate. In some embodiments, an annealing process may becarried out on the gate dielectric to improve its quality when a high-kmaterial is used.

The gate electrode may be formed on the gate dielectric and may includeat least one p-type work function metal or n-type work function metal,depending on whether the transistor 1640 is to be a p-type metal oxidesemiconductor (PMOS) or an n-type metal oxide semiconductor (NMOS)transistor. In some implementations, the gate electrode may consist of astack of two or more metal layers, where one or more metal layers arework function metal layers and at least one metal layer is a fill metallayer. Further metal layers may be included for other purposes, such asa barrier layer. For a PMOS transistor, metals that may be used for thegate electrode include, but are not limited to, ruthenium, palladium,platinum, cobalt, nickel, conductive metal oxides (e.g., rutheniumoxide), and any of the metals discussed below with reference to an NMOStransistor (e.g., for work function tuning). For an NMOS transistor,metals that may be used for the gate electrode include, but are notlimited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys ofthese metals, carbides of these metals (e.g., hafnium carbide, zirconiumcarbide, titanium carbide, tantalum carbide, and aluminum carbide), andany of the metals discussed above with reference to a PMOS transistor(e.g., for work function tuning).

In some embodiments, when viewed as a cross-section of the transistor1640 along the source-channel-drain direction, the gate electrode mayconsist of a U-shaped structure that includes a bottom portionsubstantially parallel to the surface of the substrate and two sidewallportions that are substantially perpendicular to the top surface of thesubstrate. In other embodiments, at least one of the metal layers thatform the gate electrode may simply be a planar layer that issubstantially parallel to the top surface of the substrate and does notinclude sidewall portions substantially perpendicular to the top surfaceof the substrate. In other embodiments, the gate electrode may consistof a combination of U-shaped structures and planar, non-U-shapedstructures. For example, the gate electrode may consist of one or moreU-shaped metal layers formed atop one or more planar, non-U-shapedlayers.

In some embodiments, a pair of sidewall spacers may be formed onopposing sides of the gate stack to bracket the gate stack. The sidewallspacers may be formed from materials such as silicon nitride, siliconoxide, silicon carbide, silicon nitride doped with carbon, and siliconoxynitride. Processes for forming sidewall spacers are well known in theart and generally include deposition and etching process steps. In someembodiments, a plurality of spacer pairs may be used; for instance, twopairs, three pairs, or four pairs of sidewall spacers may be formed onopposing sides of the gate stack.

The S/D regions 1620 may be formed within the substrate 1602 adjacent tothe gate 1622 of each transistor 1640. The S/D regions 1620 may beformed using an implantation/diffusion process or an etching/depositionprocess, for example. In the former process, dopants such as boron,aluminum, antimony, phosphorous, or arsenic may be ion-implanted intothe substrate 1602 to form the S/D regions 1620. An annealing processthat activates the dopants and causes them to diffuse farther into thesubstrate 1602 may follow the ion-implantation process. In the latterprocess, the substrate 1602 may first be etched to form recesses at thelocations of the S/D regions 1620. An epitaxial deposition process maythen be carried out to fill the recesses with material that is used tofabricate the S/D regions 1620. In some implementations, the S/D regions1620 may be fabricated using a silicon alloy such as silicon germaniumor silicon carbide. In some embodiments, the epitaxially depositedsilicon alloy may be doped in situ with dopants such as boron, arsenic,or phosphorous. In some embodiments, the S/D regions 1620 may be formedusing one or more alternate semiconductor materials such as germanium ora group III-V material or alloy. In further embodiments, one or morelayers of metal and/or metal alloys may be used to form the S/D regions1620.

Electrical signals, such as power and/or input/output (I/O) signals, maybe routed to and/or from the devices (e.g., the transistors 1640) of thedevice layer 1604 through one or more interconnect layers disposed onthe device layer 1604 (illustrated in FIG. 59 as interconnect layers1606-1610). For example, electrically conductive features of the devicelayer 1604 (e.g., the gate 1622 and the S/D contacts 1624) may beelectrically coupled with the interconnect structures 1628 of theinterconnect layers 1606-1610. The one or more interconnect layers1606-1610 may form a metallization stack (also referred to as an “ILDstack”) 1619 of the IC device 1600. In some embodiments, an IC device1600 may be a “passive” device in that it includes no active components(e.g., transistors), while in other embodiments, a die 1502 may be an“active” die in that it includes active components.

The interconnect structures 1628 may be arranged within the interconnectlayers 1606-1610 to route electrical signals according to a wide varietyof designs (in particular, the arrangement is not limited to theparticular configuration of interconnect structures 1628 depicted inFIG. 59). Although a particular number of interconnect layers 1606-1610is depicted in FIG. 59, embodiments of the present disclosure include ICdevices having more or fewer interconnect layers than depicted.

In some embodiments, the interconnect structures 1628 may include lines1628 a and/or vias 1628 b filled with an electrically conductivematerial such as a metal. The lines 1628 a may be arranged to routeelectrical signals in a direction of a plane that is substantiallyparallel with a surface of the substrate 1602 upon which the devicelayer 1604 is formed. For example, the lines 1628 a may route electricalsignals in a direction in and out of the page from the perspective ofFIG. 59. The vias 1628 b may be arranged to route electrical signals ina direction of a plane that is substantially perpendicular to thesurface of the substrate 1602 upon which the device layer 1604 isformed. In some embodiments, the vias 1628 b may electrically couplelines 1628 a of different interconnect layers 1606-1610 together.

The interconnect layers 1606-1610 may include a dielectric material 1626disposed between the interconnect structures 1628, as shown in FIG. 59.In some embodiments, the dielectric material 1626 disposed between theinterconnect structures 1628 in different ones of the interconnectlayers 1606-1610 may have different compositions; in other embodiments,the composition of the dielectric material 1626 between differentinterconnect layers 1606-1610 may be the same.

A first interconnect layer 1606 may be formed above the device layer1604. In some embodiments, the first interconnect layer 1606 may includelines 1628 a and/or vias 1628 b, as shown. The lines 1628 a of the firstinterconnect layer 1606 may be coupled with contacts (e.g., the S/Dcontacts 1624) of the device layer 1604.

A second interconnect layer 1608 may be formed above the firstinterconnect layer 1606. In some embodiments, the second interconnectlayer 1608 may include vias 1628 b to couple the lines 1628 a of thesecond interconnect layer 1608 with the lines 1628 a of the firstinterconnect layer 1606. Although the lines 1628 a and the vias 1628 bare structurally delineated with a line within each interconnect layer(e.g., within the second interconnect layer 1608) for the sake ofclarity, the lines 1628 a and the vias 1628 b may be structurally and/ormaterially contiguous (e.g., simultaneously filled during adual-damascene process) in some embodiments.

A third interconnect layer 1610 (and additional interconnect layers, asdesired) may be formed in succession on the second interconnect layer1608 according to similar techniques and configurations described inconnection with the second interconnect layer 1608 or the firstinterconnect layer 1606. In some embodiments, the interconnect layersthat are “higher up” in the metallization stack 1619 in the IC device1600 (i.e., farther away from the device layer 1604) may be thicker.

The IC device 1600 may include a surface insulation material 1634 (e.g.,polyimide or similar material) and one or more conductive contacts 1636formed on the interconnect layers 1606-1610. In FIG. 59, the conductivecontacts 1636 are illustrated as taking the form of bond pads. Theconductive contacts 1636 may be electrically coupled with theinterconnect structures 1628 and configured to route the electricalsignals of the transistor(s) 1640 to other external devices. Forexample, solder bonds may be formed on the one or more conductivecontacts 1636 to mechanically and/or electrically couple a chipincluding the IC device 1600 with another component (e.g., a circuitboard). The IC device 1600 may include additional or alternatestructures to route the electrical signals from the interconnect layers1606-1610; for example, the conductive contacts 1636 may include otheranalogous features (e.g., posts) that route the electrical signals toexternal components.

FIG. 60 is a side, cross-sectional view of an IC device assembly 1700that may include one or more microelectronic structures 100 and/ormicroelectronic assemblies 150, in accordance with any of theembodiments disclosed herein. The IC device assembly 1700 includes anumber of components disposed on a circuit board 1702 (which may be,e.g., a motherboard). The IC device assembly 1700 includes componentsdisposed on a first face 1740 of the circuit board 1702 and an opposingsecond face 1742 of the circuit board 1702; generally, components may bedisposed on one or both faces 1740 and 1742. Any of the IC packagesdiscussed below with reference to the IC device assembly 1700 may takethe form of any of the embodiments of the microelectronic assemblies 150discussed herein, or may otherwise include any of the microelectronicstructures 100 disclosed herein.

In some embodiments, the circuit board 1702 may be a PCB includingmultiple metal layers separated from one another by layers of dielectricmaterial and interconnected by electrically conductive vias. Any one ormore of the metal layers may be formed in a desired circuit pattern toroute electrical signals (optionally in conjunction with other metallayers) between the components coupled to the circuit board 1702. Inother embodiments, the circuit board 1702 may be a non-PCB substrate.

The IC device assembly 1700 illustrated in FIG. 60 includes apackage-on-interposer structure 1736 coupled to the first face 1740 ofthe circuit board 1702 by coupling components 1716. The couplingcomponents 1716 may electrically and mechanically couple thepackage-on-interposer structure 1736 to the circuit board 1702, and mayinclude solder balls (as shown in FIG. 60), male and female portions ofa socket, an adhesive, an underfill material, and/or any other suitableelectrical and/or mechanical coupling structure.

The package-on-interposer structure 1736 may include an IC package 1720coupled to an package interposer 1704 by coupling components 1718. Thecoupling components 1718 may take any suitable form for the application,such as the forms discussed above with reference to the couplingcomponents 1716. Although a single IC package 1720 is shown in FIG. 60,multiple IC packages may be coupled to the package interposer 1704;indeed, additional interposers may be coupled to the package interposer1704. The package interposer 1704 may provide an intervening substrateused to bridge the circuit board 1702 and the IC package 1720. The ICpackage 1720 may be or include, for example, a die (the die 1502 of FIG.58), an IC device (e.g., the IC device 1600 of FIG. 59), or any othersuitable component. Generally, the package interposer 1704 may spread aconnection to a wider pitch or reroute a connection to a differentconnection. For example, the package interposer 1704 may couple the ICpackage 1720 (e.g., a die) to a set of ball grid array (BGA) conductivecontacts of the coupling components 1716 for coupling to the circuitboard 1702. In the embodiment illustrated in FIG. 60, the IC package1720 and the circuit board 1702 are attached to opposing sides of thepackage interposer 1704; in other embodiments, the IC package 1720 andthe circuit board 1702 may be attached to a same side of the packageinterposer 1704. In some embodiments, three or more components may beinterconnected by way of the package interposer 1704.

In some embodiments, the package interposer 1704 may be formed as a PCB,including multiple metal layers separated from one another by layers ofdielectric material and interconnected by electrically conductive vias.In some embodiments, the package interposer 1704 may be formed of anepoxy resin, a fiberglass-reinforced epoxy resin, an epoxy resin withinorganic fillers, a ceramic material, or a polymer material such aspolyimide. In some embodiments, the package interposer 1704 may beformed of alternate rigid or flexible materials that may include thesame materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials. The package interposer 1704 may include metal lines 1710 andvias 1708, including but not limited to through-silicon vias (TSVs)1706. The package interposer 1704 may further include embedded devices1714, including both passive and active devices. Such devices mayinclude, but are not limited to, capacitors, decoupling capacitors,resistors, inductors, fuses, diodes, transformers, sensors,electrostatic discharge (ESD) devices, and memory devices. More complexdevices such as radio frequency devices, power amplifiers, powermanagement devices, antennas, arrays, sensors, andmicroelectromechanical systems (MEMS) devices may also be formed on thepackage interposer 1704. The package-on-interposer structure 1736 maytake the form of any of the package-on-interposer structures known inthe art. In some embodiments, the package interposer 1704 may includeone or more microelectronic structures 100 and/or microelectronicassemblies 150.

The IC device assembly 1700 may include an IC package 1724 coupled tothe first face 1740 of the circuit board 1702 by coupling components1722. The coupling components 1722 may take the form of any of theembodiments discussed above with reference to the coupling components1716, and the IC package 1724 may take the form of any of theembodiments discussed above with reference to the IC package 1720.

The IC device assembly 1700 illustrated in FIG. 60 includes apackage-on-package structure 1734 coupled to the second face 1742 of thecircuit board 1702 by coupling components 1728. The package-on-packagestructure 1734 may include an IC package 1726 and an IC package 1732coupled together by coupling components 1730 such that the IC package1726 is disposed between the circuit board 1702 and the IC package 1732.The coupling components 1728 and 1730 may take the form of any of theembodiments of the coupling components 1716 discussed above, and the ICpackages 1726 and 1732 may take the form of any of the embodiments ofthe IC package 1720 discussed above. The package-on-package structure1734 may be configured in accordance with any of the package-on-packagestructures known in the art.

FIG. 61 is a block diagram of an example electrical device 1800 that mayinclude one or more microelectronic structures 100 and/ormicroelectronic assemblies 150 in accordance with any of the embodimentsdisclosed herein. For example, any suitable ones of the components ofthe electrical device 1800 may include one or more of themicroelectronic structures 100, microelectronic assemblies 150, ICdevice assemblies 1700, IC devices 1600, or dies 1502 disclosed herein.A number of components are illustrated in FIG. 61 as included in theelectrical device 1800, but any one or more of these components may beomitted or duplicated, as suitable for the application. In someembodiments, some or all of the components included in the electricaldevice 1800 may be attached to one or more motherboards. In someembodiments, some or all of these components are fabricated onto asingle system-on-a-chip (SoC) die.

Additionally, in various embodiments, the electrical device 1800 may notinclude one or more of the components illustrated in FIG. 61, but theelectrical device 1800 may include interface circuitry for coupling tothe one or more components. For example, the electrical device 1800 maynot include a display device 1806, but may include display deviceinterface circuitry (e.g., a connector and driver circuitry) to which adisplay device 1806 may be coupled. In another set of examples, theelectrical device 1800 may not include an audio input device 1824 or anaudio output device 1808, but may include audio input or output deviceinterface circuitry (e.g., connectors and supporting circuitry) to whichan audio input device 1824 or audio output device 1808 may be coupled.

The electrical device 1800 may include a processing device 1802 (e.g.,one or more processing devices). As used herein, the term “processingdevice” or “processor” may refer to any device or portion of a devicethat processes electronic data from registers and/or memory to transformthat electronic data into other electronic data that may be stored inregisters and/or memory. The processing device 1802 may include one ormore digital signal processors (DSPs), application-specific integratedcircuits (ASICs), central processing units (CPUs), graphics processingunits (GPUs), cryptoprocessors (specialized processors that executecryptographic algorithms within hardware), server processors, or anyother suitable processing devices. The electrical device 1800 mayinclude a memory 1804, which may itself include one or more memorydevices such as volatile memory (e.g., dynamic random access memory(DRAM)), nonvolatile memory (e.g., read-only memory (ROM)), flashmemory, solid state memory, and/or a hard drive. In some embodiments,the memory 1804 may include memory that shares a die with the processingdevice 1802. This memory may be used as cache memory and may includeembedded dynamic random access memory (eDRAM) or spin transfer torquemagnetic random access memory (STT-MRAM).

In some embodiments, the electrical device 1800 may include acommunication chip 1812 (e.g., one or more communication chips). Forexample, the communication chip 1812 may be configured for managingwireless communications for the transfer of data to and from theelectrical device 1800. The term “wireless” and its derivatives may beused to describe circuits, devices, systems, methods, techniques,communications channels, etc., that may communicate data through the useof modulated electromagnetic radiation through a nonsolid medium. Theterm does not imply that the associated devices do not contain anywires, although in some embodiments they might not.

The communication chip 1812 may implement any of a number of wirelessstandards or protocols, including but not limited to Institute forElectrical and Electronic Engineers (IEEE) standards including Wi-Fi(IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005Amendment), Long-Term Evolution (LTE) project along with any amendments,updates, and/or revisions (e.g., advanced LTE project, ultra mobilebroadband (UMB) project (also referred to as “3GPP2”), etc.). IEEE802.16 compatible Broadband Wireless Access (BWA) networks are generallyreferred to as WiMAX networks, an acronym that stands for WorldwideInteroperability for Microwave Access, which is a certification mark forproducts that pass conformity and interoperability tests for the IEEE802.16 standards. The communication chip 1812 may operate in accordancewith a Global System for Mobile Communication (GSM), General PacketRadio Service (GPRS), Universal Mobile Telecommunications System (UMTS),High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network.The communication chip 1812 may operate in accordance with Enhanced Datafor GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN),Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN(E-UTRAN). The communication chip 1812 may operate in accordance withCode Division Multiple Access (CDMA), Time Division Multiple Access(TDMA), Digital Enhanced Cordless Telecommunications (DECT),Evolution-Data Optimized (EV-DO), and derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The communication chip 1812 may operate in accordance with otherwireless protocols in other embodiments. The electrical device 1800 mayinclude an antenna 1822 to facilitate wireless communications and/or toreceive other wireless communications (such as AM or FM radiotransmissions).

In some embodiments, the communication chip 1812 may manage wiredcommunications, such as electrical, optical, or any other suitablecommunication protocols (e.g., the Ethernet). As noted above, thecommunication chip 1812 may include multiple communication chips. Forinstance, a first communication chip 1812 may be dedicated toshorter-range wireless communications such as Wi-Fi or Bluetooth, and asecond communication chip 1812 may be dedicated to longer-range wirelesscommunications such as global positioning system (GPS), EDGE, GPRS,CDMA, WiMAX, LTE, EV-DO, or others. In some embodiments, a firstcommunication chip 1812 may be dedicated to wireless communications, anda second communication chip 1812 may be dedicated to wiredcommunications.

The electrical device 1800 may include battery/power circuitry 1814. Thebattery/power circuitry 1814 may include one or more energy storagedevices (e.g., batteries or capacitors) and/or circuitry for couplingcomponents of the electrical device 1800 to an energy source separatefrom the electrical device 1800 (e.g., AC line power).

The electrical device 1800 may include a display device 1806 (orcorresponding interface circuitry, as discussed above). The displaydevice 1806 may include any visual indicators, such as a heads-updisplay, a computer monitor, a projector, a touchscreen display, aliquid crystal display (LCD), a light-emitting diode display, or a flatpanel display.

The electrical device 1800 may include an audio output device 1808 (orcorresponding interface circuitry, as discussed above). The audio outputdevice 1808 may include any device that generates an audible indicator,such as speakers, headsets, or earbuds.

The electrical device 1800 may include an audio input device 1824 (orcorresponding interface circuitry, as discussed above). The audio inputdevice 1824 may include any device that generates a signalrepresentative of a sound, such as microphones, microphone arrays, ordigital instruments (e.g., instruments having a musical instrumentdigital interface (MIDI) output).

The electrical device 1800 may include a GPS device 1818 (orcorresponding interface circuitry, as discussed above). The GPS device1818 may be in communication with a satellite-based system and mayreceive a location of the electrical device 1800, as known in the art.

The electrical device 1800 may include an other output device 1810 (orcorresponding interface circuitry, as discussed above). Examples of theother output device 1810 may include an audio codec, a video codec, aprinter, a wired or wireless transmitter for providing information toother devices, or an additional storage device.

The electrical device 1800 may include an other input device 1820 (orcorresponding interface circuitry, as discussed above). Examples of theother input device 1820 may include an accelerometer, a gyroscope, acompass, an image capture device, a keyboard, a cursor control devicesuch as a mouse, a stylus, a touchpad, a bar code reader, a QuickResponse (QR) code reader, any sensor, or a radio frequencyidentification (RFID) reader.

The electrical device 1800 may have any desired form factor, such as ahandheld or mobile electrical device (e.g., a cell phone, a smart phone,a mobile internet device, a music player, a tablet computer, a laptopcomputer, a netbook computer, an ultrabook computer, a personal digitalassistant (PDA), an ultra mobile personal computer, etc.), a desktopelectrical device, a server device or other networked computingcomponent, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a vehicle control unit, a digital camera, adigital video recorder, or a wearable electrical device. In someembodiments, the electrical device 1800 may be any other electronicdevice that processes data.

The following paragraphs provide various examples of the embodimentsdisclosed herein.

Example A1 is a microelectronic structure, including: a substrateincluding a surface insulation material at a face of the substrate; acavity in the substrate, wherein the cavity extends at least through thesurface insulation material; and a bridge component in the cavity,wherein the bridge component includes a first face and an opposingsecond face, the second face of the bridge component is between thefirst face of the bridge component and the substrate, and the bridgecomponent includes conductive contacts at the first face of the bridgecomponent.

Example A2 includes the subject matter of Example A1, and furtherspecifies that the substrate includes an organic dielectric material.

Example A3 includes the subject matter of any of Examples A1-2, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, the surface insulation material includes anopening, and the conductive contact of the substrate is at a bottom ofthe opening.

Example A4 includes the subject matter of Example A3, and furtherincludes: solder on the conductive contact of the substrate.

Example A5 includes the subject matter of any of Examples A3-4, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example A6 includes the subject matter of Example A5, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example A7 includes the subject matter of any of Examples A1-6, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example A8 includes the subject matter of any of Examples A1-7, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example A9 includes the subject matter of Example A8, and furtherspecifies that the bridge component is coupled to the dielectricmaterial.

Example A10 includes the subject matter of Example A9, and furtherspecifies that the bridge component is coupled to the dielectricmaterial by an adhesive.

Example A11 includes the subject matter of any of Examples A8-10, andfurther specifies that the bottom of the cavity is coplanar with abottom of a conductive contact of the substrate at the face of thesubstrate.

Example A12 includes the subject matter of any of Examples A1-7, andfurther specifies that a metal is at a bottom of the cavity.

Example A13 includes the subject matter of Example A12, and furtherspecifies that a bottom of the metal is coplanar with a bottom of thesurface insulation material.

Example A14 includes the subject matter of any of Examples A12-13, andfurther specifies that the metal extends onto the surface insulationmaterial at side faces of the cavity.

Example A15 includes the subject matter of any of Examples A12-14, andfurther specifies that the metal has a thickness that is less than athickness of a conductive contact of the substrate at the face of thesubstrate.

Example A16 includes the subject matter of Example A15, and furtherspecifies that the thickness of the metal is less than 5 microns.

Example A17 includes the subject matter of any of Examples A12-13, andfurther specifies that a top of the metal is coplanar with a top of aconductive contact of the substrate at the face of the substrate.

Example A18 includes the subject matter of Example A17, and furtherspecifies that a thickness of the metal is greater than 5 microns.

Example A19 includes the subject matter of any of Examples A12-18, andfurther specifies that the bridge component is coupled to the metal.

Example A20 includes the subject matter of Example A19, and furtherspecifies that the bridge component is coupled to the metal by anadhesive.

Example A21 includes the subject matter of Example A20, and furtherspecifies that the adhesive includes a snap-curable adhesive.

Example A22 includes the subject matter of any of Examples A12-21, andfurther specifies that the metal includes nickel, palladium, and gold.

Example A23 includes the subject matter of any of Examples A12-21, andfurther specifies that the metal includes aluminum.

Example A24 includes the subject matter of any of Examples A12-21, andfurther specifies that the metal includes copper.

Example A25 includes the subject matter of any of Examples A1-24, andfurther specifies that a bottom of the cavity has an undulating surface.

Example A26 includes the subject matter of Example A25, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example A27 includes the subject matter of any of Examples A25, andfurther specifies that the undulations have an amplitude that is lessthan 1 micron.

Example A28 includes the subject matter of any of Examples A1-27, andfurther specifies that the surface insulation material has a thicknessbetween 10 microns and 30 microns.

Example A29 includes the subject matter of any of Examples A1-28, andfurther specifies that the bridge component includes a semiconductormaterial.

Example A30 includes the subject matter of any of Examples A1-29, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example A31 is a microelectronic assembly, including: a substrate; acavity at a face of the substrate; a bridge component in the cavity,wherein the bridge component includes a first face and an opposingsecond face, the second face of the bridge component is between thefirst face of the bridge component and the substrate, and the bridgecomponent includes conductive contacts at the first face of the bridgecomponent; and a microelectronic component having a first face and anopposing second face, the first face of the microelectronic component isbetween the second face of the microelectronic component and thesubstrate, the microelectronic component includes conductive contacts atthe first face of the microelectronic component, some of the conductivecontacts of the microelectronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the microelectronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example A32 includes the subject matter of Example A31, and furtherspecifies that the substrate includes an organic dielectric material.

Example A33 includes the subject matter of any of Examples A31-32, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the conductive contact of the substrate is at abottom of the opening.

Example A34 includes the subject matter of Example A33, and furtherincludes: solder on the conductive contact of the substrate.

Example A35 includes the subject matter of any of Examples A33-34, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example A36 includes the subject matter of Example A35, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example A37 includes the subject matter of any of Examples A31-36, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example A38 includes the subject matter of any of Examples A31-37, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example A39 includes the subject matter of Example A38, and furtherspecifies that the bridge component is coupled to the dielectricmaterial.

Example A40 includes the subject matter of Example A39, and furtherspecifies that the bridge component is coupled to the dielectricmaterial by an adhesive.

Example A41 includes the subject matter of any of Examples A38-40, andfurther specifies that the bottom of the cavity is coplanar with abottom of a conductive contact of the substrate at the face of thesubstrate.

Example A42 includes the subject matter of any of Examples A31-37, andfurther specifies that a metal is at a bottom of the cavity.

Example A43 includes the subject matter of Example A42, and furtherspecifies that a bottom of the metal is coplanar with a bottom ofsurface insulation material at the face of the substrate.

Example A44 includes the subject matter of any of Examples A42-43, andfurther specifies that the metal extends onto surface insulationmaterial at side faces of the cavity.

Example A45 includes the subject matter of any of Examples A42-44, andfurther specifies that the metal has a thickness that is less than athickness of a conductive contact of the substrate at the face of thesubstrate.

Example A46 includes the subject matter of Example A45, and furtherspecifies that the thickness of the metal is less than 5 microns.

Example A47 includes the subject matter of any of Examples A42-43, andfurther specifies that a top of the metal is coplanar with a top of aconductive contact of the substrate at the face of the substrate.

Example A48 includes the subject matter of Example A47, and furtherspecifies that a thickness of the metal is greater than 5 microns.

Example A49 includes the subject matter of any of Examples A42-48, andfurther specifies that the bridge component is coupled to the metal.

Example A50 includes the subject matter of Example A49, and furtherspecifies that the bridge component is coupled to the metal by anadhesive.

Example A51 includes the subject matter of Example A50, and furtherspecifies that the adhesive includes a snap-curable adhesive.

Example A52 includes the subject matter of any of Examples A42-51, andfurther specifies that the metal includes nickel, palladium, and gold.

Example A53 includes the subject matter of any of Examples A42-51, andfurther specifies that the metal includes aluminum.

Example A54 includes the subject matter of any of Examples A42-51, andfurther specifies that the metal includes copper.

Example A55 includes the subject matter of any of Examples A31-54, andfurther specifies that a bottom of the cavity has an undulating surface.

Example A56 includes the subject matter of Example A55, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example A57 includes the subject matter of Example A55, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example A58 includes the subject matter of any of Examples A31-57, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example A59 includes the subject matter of any of Examples A31-58, andfurther specifies that the bridge component includes a semiconductormaterial.

Example A60 includes the subject matter of any of Examples A31-59, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example A61 includes the subject matter of any of Examples A31-60, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example A62 includes the subject matter of any of Examples A31-61, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example A63 includes the subject matter of any of Examples A31-62, andfurther specifies that the microelectronic component includes a die.

Example A64 includes the subject matter of any of Examples A31-63, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example A65 includes the subject matter of Example A64, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example A66 includes the subject matter of any of Examples A31-65, andfurther specifies that the microelectronic component includes atransistor.

Example A67 includes the subject matter of any of Examples A31-66, andfurther specifies that the microelectronic component includes a memorydevice.

Example A68 includes the subject matter of any of Examples A31-67, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example A69 includes the subject matter of any of Examples A31-68, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example A70 includes the subject matter of Example A69, and furtherspecifies that the surface finish further includes palladium and gold.

Example A71 is an electronic device, including: a circuit board; and amicroelectronic assembly conductively coupled to the circuit board,wherein the microelectronic assembly includes: a substrate; a cavity ata face of the substrate; a bridge component in the cavity; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, some of the conductive contacts of themicroelectronic component are coupled by solder to conductive contactsof the substrate, and some of the conductive contacts of themicroelectronic component are coupled by solder to conductive contactsof the bridge component.

Example A72 includes the subject matter of Example A71, and furtherspecifies that the substrate includes an organic dielectric material.

Example A73 includes the subject matter of any of Examples A71-72, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the conductive contact of the substrate is at abottom of the opening.

Example A74 includes the subject matter of Example A73, and furtherincludes: solder on the conductive contact of the substrate.

Example A75 includes the subject matter of any of Examples A73-74, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example A76 includes the subject matter of Example A75, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example A77 includes the subject matter of any of Examples A71-76, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example A78 includes the subject matter of any of Examples A71-77, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example A79 includes the subject matter of Example A78, and furtherspecifies that the bridge component is coupled to the dielectricmaterial.

Example A80 includes the subject matter of Example A79, and furtherspecifies that the bridge component is coupled to the dielectricmaterial by an adhesive.

Example A81 includes the subject matter of any of Examples A78-80, andfurther specifies that the bottom of the cavity is coplanar with abottom of a conductive contact of the substrate at the face of thesubstrate.

Example A82 includes the subject matter of any of Examples A71-77, andfurther specifies that a metal is at a bottom of the cavity.

Example A83 includes the subject matter of Example A82, and furtherspecifies that a bottom of the metal is coplanar with a bottom ofsurface insulation material at the face of the substrate.

Example A84 includes the subject matter of any of Examples A82-83, andfurther specifies that the metal extends onto surface insulationmaterial at side faces of the cavity.

Example A85 includes the subject matter of any of Examples A82-84, andfurther specifies that the metal has a thickness that is less than athickness of a conductive contact of the substrate at the face of thesubstrate.

Example A86 includes the subject matter of Example A85, and furtherspecifies that the thickness of the metal is less than 5 microns.

Example A87 includes the subject matter of any of Examples A82-83, andfurther specifies that a top of the metal is coplanar with a top of aconductive contact of the substrate at the face of the substrate.

Example A88 includes the subject matter of Example A87, and furtherspecifies that a thickness of the metal is greater than 5 microns.

Example A89 includes the subject matter of any of Examples A82-88, andfurther specifies that the bridge component is coupled to the metal.

Example A90 includes the subject matter of Example A89, and furtherspecifies that the bridge component is coupled to the metal by anadhesive.

Example A91 includes the subject matter of Example A90, and furtherspecifies that the adhesive includes a snap-curable adhesive.

Example A92 includes the subject matter of any of Examples A82-91, andfurther specifies that the metal includes nickel, palladium, and gold.

Example A93 includes the subject matter of any of Examples A82-91, andfurther specifies that the metal includes aluminum.

Example A94 includes the subject matter of any of Examples A82-91, andfurther specifies that the metal includes copper.

Example A95 includes the subject matter of any of Examples A71-94, andfurther specifies that a bottom of the cavity has an undulating surface.

Example A96 includes the subject matter of Example A95, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example A97 includes the subject matter of Example A95, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example A98 includes the subject matter of any of Examples A71-97, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example A99 includes the subject matter of any of Examples A71-98, andfurther specifies that the bridge component includes a semiconductormaterial.

Example A100 includes the subject matter of any of Examples A71-99, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example A101 includes the subject matter of any of Examples A71-100, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example A102 includes the subject matter of any of Examples A71-101, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example A103 includes the subject matter of any of Examples A71-102, andfurther specifies that the microelectronic component includes a die.

Example A104 includes the subject matter of any of Examples A71-103, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example A105 includes the subject matter of Example A104, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example A106 includes the subject matter of any of Examples A71-105, andfurther specifies that the microelectronic component includes atransistor.

Example A107 includes the subject matter of any of Examples A71-106, andfurther specifies that the microelectronic component includes a memorydevice.

Example A108 includes the subject matter of any of Examples A71-107, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example A109 includes the subject matter of any of Examples A71-108, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example A110 includes the subject matter of Example A109, and furtherspecifies that the surface finish further includes palladium and gold.

Example A111 includes the subject matter of any of Examples A71-110, andfurther specifies that the electronic device is a handheld computingdevice, a laptop computing device, a wearable computing device, or aserver computing device.

Example A112 includes the subject matter of any of Examples A71-111, andfurther specifies that the circuit board is a motherboard.

Example A113 includes the subject matter of any of Examples A71-112, andfurther includes: a display communicatively coupled to the circuitboard.

Example A114 includes the subject matter of Example A113, and furtherspecifies that the display includes a touchscreen display.

Example A115 includes the subject matter of any of Examples A71-114, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

Example A116 is a method of manufacturing a microelectronic structure,including any of the methods disclosed herein.

Example A117 is a method of manufacturing a microelectronic assembly,including any of the methods disclosed herein.

Example B1 is a microelectronic structure, including: a substrateincluding a first layer, a last layer, and one or more interior layersbetween the first layer and the last layer; a cavity in a face of thesubstrate, wherein the face of the substrate is proximate to the lastlayer, and the cavity extends through and past the last layer; a metalat a bottom of the cavity; and a bridge component in the cavity, whereinthe bridge component includes a first face and an opposing second face,the second face of the bridge component is between the first face of thebridge component and the substrate, and the bridge component includesconductive contacts at the first face of the bridge component.

Example B2 includes the subject matter of Example B1, and furtherspecifies that the substrate includes an organic dielectric material.

Example B3 includes the subject matter of any of Examples B1-2, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the conductive contact of the substrate is at abottom of the opening.

Example B4 includes the subject matter of Example B3, and furtherincludes: solder on the conductive contact of the substrate.

Example B5 includes the subject matter of any of Examples B3-4, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example B6 includes the subject matter of Example B5, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example B7 includes the subject matter of any of Examples B1-6, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example B8 includes the subject matter of any of Examples B1-7, andfurther specifies that a metal at a bottom of the cavity is adjacent toa metal line of an interior metal layer of the substrate.

Example B9 includes the subject matter of Example B8, and furtherspecifies that the metal line includes copper.

Example B10 includes the subject matter of Example B9, and furtherspecifies that the metal is different from copper.

Example B11 includes the subject matter of any of Examples B8-10, andfurther specifies that the metal has a thickness that is less than athickness of the metal line.

Example B12 includes the subject matter of any of Examples B1-11, andfurther specifies that the metal extends onto side faces of the cavity.

Example B13 includes the subject matter of any of Examples B1-11, andfurther specifies that the metal does not extend onto side faces of thecavity.

Example B14 includes the subject matter of any of Examples B1-13, andfurther specifies that the thickness of the metal is less than 1 micron.

Example B15 includes the subject matter of any of Examples B1-14, andfurther specifies that the bridge component is coupled to the metal.

Example B16 includes the subject matter of any of Examples B1-15, andfurther includes: an adhesive between the bridge component and themetal.

Example B17 includes the subject matter of Example B16, and furtherspecifies that the adhesive includes a snap-curable adhesive.

Example B18 includes the subject matter of any of Examples B16-17, andfurther specifies that the adhesive includes a UV-curable adhesive.

Example B19 includes the subject matter of any of Examples B16-17, andfurther specifies that the adhesive includes a first adhesive region anda second adhesive region, and a material composition of the firstadhesive region is different from a material composition of the secondadhesive region.

Example B20 includes the subject matter of Example B19, and furtherspecifies that the first adhesive region is proximate to edges of thebridge component and the second adhesive region is proximate to aninterior of the bridge component.

Example B21 includes the subject matter of any of Examples B19-20, andfurther specifies that the second adhesive region includes a thermallycurable adhesive and the first adhesive region includes a snap-curableadhesive.

Example B22 includes the subject matter of any of Examples B16-21, andfurther specifies that the metal does not extend outside the regionbetween the adhesive and the bottom of the cavity.

Example B23 includes the subject matter of any of Examples B1-22, andfurther specifies that the metal includes aluminum.

Example B24 includes the subject matter of any of Examples B1-23, andfurther specifies that the metal includes gold.

Example B25 includes the subject matter of any of Examples B1-24, andfurther specifies that a diameter of an opening of the cavity is greaterthan a diameter of a bottom of the cavity by greater than 5 microns.

Example B26 includes the subject matter of any of Examples B1-25, andfurther specifies that a bottom of the cavity has an undulating surface.

Example B27 includes the subject matter of Example B26, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example B28 includes the subject matter of any of Examples B1-27, andfurther specifies that surface insulation material of the substrate hasa thickness between 10 microns and 30 microns.

Example B29 includes the subject matter of any of Examples B1-28, andfurther specifies that the bridge component includes a semiconductormaterial.

Example B30 includes the subject matter of any of Examples B1-29, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example B31 is a microelectronic assembly, including: a substrate; acavity in a face of the substrate, wherein the face of the substrate isproximate to a metallization layer of the substrate, and the cavityextends through and past the metallization layer; a metal at a bottom ofthe cavity; a bridge component in the cavity, wherein the bridgecomponent includes a first face and an opposing second face, the secondface of the bridge component is between the first face of the bridgecomponent and the substrate, and the bridge component includesconductive contacts at the first face of the bridge component; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, some of the conductive contacts of themicroelectronic component are conductively coupled to conductivecontacts of the substrate at the face of the substrate, and some of theconductive contacts of the microelectronic component are conductivelycoupled to conductive contacts at the first face of the bridgecomponent.

Example B32 includes the subject matter of Example B31, and furtherspecifies that the substrate includes an organic dielectric material.

Example B33 includes the subject matter of any of Examples B31-32, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the substrate includes a surfaceinsulation material at the face of the substrate, the surface insulationmaterial includes an opening, and the conductive contact of thesubstrate is at a bottom of the opening.

Example B34 includes the subject matter of Example B33, and furtherincludes: solder on the conductive contact of the substrate.

Example B35 includes the subject matter of any of Examples B33-34, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example B36 includes the subject matter of Example B35, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example B37 includes the subject matter of any of Examples B31-36, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example B38 includes the subject matter of any of Examples B31-37, andfurther specifies that a metal at a bottom of the cavity is adjacent toa metal line of an interior metal layer of the substrate.

Example B39 includes the subject matter of Example B38, and furtherspecifies that the metal line includes copper.

Example B40 includes the subject matter of Example B39, and furtherspecifies that the metal is different from copper.

Example B41 includes the subject matter of any of Examples B38-40, andfurther specifies that the metal has a thickness that is less than athickness of the metal line.

Example B42 includes the subject matter of any of Examples B31-41, andfurther specifies that the metal extends onto side faces of the cavity.

Example B43 includes the subject matter of any of Examples B31-41, andfurther specifies that the metal does not extend onto side faces of thecavity.

Example B44 includes the subject matter of any of Examples B31-43, andfurther specifies that the thickness of the metal is less than 1 micron.

Example B45 includes the subject matter of any of Examples B31-44, andfurther specifies that the bridge component is coupled to the metal.

Example B46 includes the subject matter of any of Examples B31-45, andfurther includes: an adhesive between the bridge component and themetal.

Example B47 includes the subject matter of Example B46, and furtherspecifies that the adhesive includes a snap-curable adhesive.

Example B48 includes the subject matter of any of Examples B46-47, andfurther specifies that the adhesive includes a UV-curable adhesive.

Example B49 includes the subject matter of any of Examples B46-47, andfurther specifies that the adhesive includes a first adhesive region anda second adhesive region, and a material composition of the firstadhesive region is different from a material composition of the secondadhesive region.

Example B50 includes the subject matter of Example B49, and furtherspecifies that the first adhesive region is proximate to edges of thebridge component and the second adhesive region is proximate to aninterior of the bridge component.

Example B51 includes the subject matter of any of Examples B49-50, andfurther specifies that the second adhesive region includes a thermallycurable adhesive and the first adhesive region includes a snap-curableadhesive.

Example B52 includes the subject matter of any of Examples B46-51, andfurther specifies that the metal does not extend outside the regionbetween the adhesive and the bottom of the cavity.

Example B53 includes the subject matter of any of Examples B31-52, andfurther specifies that the metal includes aluminum.

Example B54 includes the subject matter of any of Examples B31-53, andfurther specifies that the metal includes gold.

Example B55 includes the subject matter of any of Examples B31-54, andfurther specifies that a diameter of an opening of the cavity is greaterthan a diameter of a bottom of the cavity by greater than 5 microns.

Example B56 includes the subject matter of any of Examples B31-55, andfurther specifies that a bottom of the cavity has an undulating surface.

Example B57 includes the subject matter of any of Examples B56, andfurther specifies that the undulations have an amplitude between 1micron and 10 microns.

Example B58 includes the subject matter of any of Examples B31-57, andfurther specifies that surface insulation material of the substrate hasa thickness between 10 microns and 30 microns.

Example B59 includes the subject matter of any of Examples B31-58, andfurther specifies that the bridge component includes a semiconductormaterial.

Example B60 includes the subject matter of any of Examples B31-59, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example B61 includes the subject matter of any of Examples B31-60, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example B62 includes the subject matter of any of Examples B31-61, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example B63 includes the subject matter of any of Examples B31-62, andfurther specifies that the microelectronic component includes a die.

Example B64 includes the subject matter of any of Examples B31-63, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example B65 includes the subject matter of Example B64, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example B66 includes the subject matter of any of Examples B31-65, andfurther specifies that the microelectronic component includes atransistor.

Example B67 includes the subject matter of any of Examples B31-66, andfurther specifies that the microelectronic component includes a memorydevice.

Example B68 includes the subject matter of any of Examples B31-67, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example B69 includes the subject matter of any of Examples B31-68, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example B70 includes the subject matter of Example B69, and furtherspecifies that the surface finish further includes palladium and gold.

Example B71 is an electronic device, including: a circuit board; and amicroelectronic assembly conductively coupled to the circuit board,wherein the microelectronic assembly includes: a substrate; a cavity ina face of the substrate, wherein the substrate includes a buildupmaterial, and the cavity extends into the buildup material; a metal at abottom of the cavity; a bridge component in the cavity; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, some of the conductive contacts of themicroelectronic component are coupled by solder to conductive contactsof the substrate, and some of the conductive contacts of themicroelectronic component are coupled by solder to conductive contactsof the bridge component.

Example B72 includes the subject matter of Example B71, and furtherspecifies that the substrate includes an organic dielectric material.

Example B73 includes the subject matter of any of Examples B71-72, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the conductive contact of the substrate is at abottom of the opening.

Example B74 includes the subject matter of Example B73, and furtherincludes: solder on the conductive contact of the substrate.

Example B75 includes the subject matter of any of Examples B73-74, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example B76 includes the subject matter of Example B75, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example B77 includes the subject matter of any of Examples B71-76, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example B78 includes the subject matter of any of Examples B71-77, andfurther specifies that a metal at a bottom of the cavity is adjacent toa metal line of an interior metal layer of the substrate.

Example B79 includes the subject matter of Example B78, and furtherspecifies that the metal line includes copper.

Example B80 includes the subject matter of Example B79, and furtherspecifies that the metal is different from copper.

Example B81 includes the subject matter of any of Examples B78-80, andfurther specifies that the metal has a thickness that is less than athickness of the metal line.

Example B82 includes the subject matter of any of Examples B71-81, andfurther specifies that the metal extends onto side faces of the cavity.

Example B83 includes the subject matter of any of Examples B71-81, andfurther specifies that the metal does not extend onto side faces of thecavity.

Example B84 includes the subject matter of any of Examples B71-83, andfurther specifies that the thickness of the metal is less than 1 micron.

Example B85 includes the subject matter of any of Examples B71-84, andfurther specifies that the bridge component is coupled to the metal.

Example B86 includes the subject matter of any of Examples B71-85, andfurther includes: an adhesive between the bridge component and themetal.

Example B87 includes the subject matter of Example B86, and furtherspecifies that the adhesive includes a snap-curable adhesive.

Example B88 includes the subject matter of any of Examples B86-87, andfurther specifies that the adhesive includes a UV-curable adhesive.

Example B89 includes the subject matter of any of Examples B86-87, andfurther specifies that the adhesive includes a first adhesive region anda second adhesive region, and a material composition of the firstadhesive region is different from a material composition of the secondadhesive region.

Example B90 includes the subject matter of Example B89, and furtherspecifies that the first adhesive region is proximate to edges of thebridge component and the second adhesive region is proximate to aninterior of the bridge component.

Example B91 includes the subject matter of any of Examples B89-90, andfurther specifies that the second adhesive region includes a thermallycurable adhesive and the first adhesive region includes a snap-curableadhesive.

Example B92 includes the subject matter of any of Examples B86-91, andfurther specifies that the metal does not extend outside the regionbetween the adhesive and the bottom of the cavity.

Example B93 includes the subject matter of any of Examples B71-92, andfurther specifies that the metal includes aluminum.

Example B94 includes the subject matter of any of Examples B71-93, andfurther specifies that the metal includes gold.

Example B95 includes the subject matter of any of Examples B71-94, andfurther specifies that a diameter of an opening of the cavity is greaterthan a diameter of a bottom of the cavity by greater than 5 microns.

Example B96 includes the subject matter of any of Examples B71-95, andfurther specifies that a bottom of the cavity has an undulating surface.

Example B97 includes the subject matter of Example B96, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example B98 includes the subject matter of any of Examples B71-97, andfurther specifies that surface insulation material of the substrate hasa thickness between 10 microns and 30 microns.

Example B99 includes the subject matter of any of Examples B71-98, andfurther specifies that the bridge component includes a semiconductormaterial.

Example B100 includes the subject matter of any of Examples B71-99, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example B101 includes the subject matter of any of Examples B71-100, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example B102 includes the subject matter of any of Examples B71-101, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example B103 includes the subject matter of any of Examples B71-102, andfurther specifies that the microelectronic component includes a die.

Example B104 includes the subject matter of any of Examples B71-103, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example B105 includes the subject matter of Example B104, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example B106 includes the subject matter of any of Examples B71-105, andfurther specifies that the microelectronic component includes atransistor.

Example B107 includes the subject matter of any of Examples B71-106, andfurther specifies that the microelectronic component includes a memorydevice.

Example B108 includes the subject matter of any of Examples B71-107, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example B109 includes the subject matter of any of Examples B71-108, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example B110 includes the subject matter of Example B109, and furtherspecifies that the surface finish further includes palladium and gold.

Example B111 includes the subject matter of any of Examples B71-110, andfurther specifies that the electronic device is a handheld computingdevice, a laptop computing device, a wearable computing device, or aserver computing device.

Example B112 includes the subject matter of any of Examples B71-111, andfurther specifies that the circuit board is a motherboard.

Example B113 includes the subject matter of any of Examples B71-112, andfurther includes: a display communicatively coupled to the circuitboard.

Example B114 includes the subject matter of any of Examples B113, andfurther specifies that the display includes a touchscreen display.

Example B115 includes the subject matter of any of Examples B71-114, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

Example B116 is bonding equipment including a bond head and anultraviolet (UV) light source.

Example B117 includes the subject matter of Example B116, and furtherspecifies that the UV light source is coupled to the bond head.

Example C1 is a microelectronic structure, including: a substrate; acavity at a face of the substrate; a bridge component in the cavity,wherein the bridge component includes a first face and an opposingsecond face, the second face of the bridge component is between thefirst face of the bridge component and the substrate, and the bridgecomponent includes conductive contacts at the first face of the bridgecomponent; a conductive contact at a face of the substrate; and amaterial between solder and the conductive contact.

Example C2 includes the subject matter of Example C1, and furtherspecifies that the substrate includes an organic dielectric material.

Example C3 includes the subject matter of any of Examples C1-2, andfurther specifies that the material includes a metal.

Example C4 includes the subject matter of Example C3, and furtherspecifies that the material includes a metal ball.

Example C5 includes the subject matter of Example C4, and furtherspecifies that the metal ball has a diameter that is between 10 micronsand 500 microns.

Example C6 includes the subject matter of Example C3, and furtherspecifies that the material includes a metal pillar.

Example C7 includes the subject matter of Example C6, and furtherspecifies that the metal pillar extends past a top surface of a surfaceinsulation material of the substrate by a distance between 10 micronsand 50 microns.

Example C8 includes the subject matter of any of Examples C6-7, andfurther specifies that the metal pillar includes a surface finish on abulk metal.

Example C9 includes the subject matter of Example C8, and furtherspecifies that the bulk metal includes copper.

Example C10 includes the subject matter of any of Examples C8-9, andfurther specifies that the surface finish includes nickel, palladium, orgold.

Example C11 includes the subject matter of any of Examples C8-10, andfurther specifies that the bulk metal is undercut relative to thesurface finish.

Example C12 includes the subject matter of any of Examples C3-11, andfurther specifies that the metal includes copper.

Example C13 includes the subject matter of any of Examples C3-12, andfurther specifies that the metal includes nickel, palladium, or gold.

Example C14 includes the subject matter of any of Examples C1-2, andfurther specifies that the solder is a first solder, the material is asecond solder, and the first solder has a different material compositionthan the second solder.

Example C15 includes the subject matter of Example C14, and furtherspecifies that the second solder has a higher melting point than thefirst solder.

Example C16 includes the subject matter of any of Examples C14-15, andfurther includes: a third solder between the second solder and theconductive contact, wherein the third solder has a different materialcomposition than the second solder.

Example C17 includes the subject matter of Example C16, and furtherspecifies that the second solder has a higher melting point than thethird solder.

Example C18 includes the subject matter of any of Examples C1-17, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example C19 includes the subject matter of Example C18, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example C20 includes the subject matter of any of Examples C1-19, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example C21 includes the subject matter of any of Examples C1-20, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example C22 includes the subject matter of Example C21, and furtherspecifies that the bridge component is coupled to the dielectricmaterial.

Example C23 includes the subject matter of Example C22, and furtherspecifies that the bridge component is coupled to the dielectricmaterial by an adhesive.

Example C24 includes the subject matter of any of Examples C21-23, andfurther specifies that the bottom of the cavity is coplanar with abottom of the conductive contact.

Example C25 includes the subject matter of any of Examples C1-24, andfurther specifies that a bottom of the cavity has an undulating surface.

Example C26 includes the subject matter of Example C25, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example C27 includes the subject matter of Example C25, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example C28 includes the subject matter of any of Examples C1-27, andfurther specifies that a surface insulation material proximate to theconductive contact of the substrate has a thickness between 10 micronsand 30 microns.

Example C29 includes the subject matter of any of Examples C1-28, andfurther specifies that the bridge component includes a semiconductormaterial.

Example C30 includes the subject matter of any of Examples C1-29, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example C31 is a microelectronic assembly, including: a substrate; acavity at a face of the substrate; a bridge component in the cavity,wherein the bridge component includes a first face and an opposingsecond face, the second face of the bridge component is between thefirst face of the bridge component and the substrate, and the bridgecomponent includes conductive contacts at the first face of the bridgecomponent; and a microelectronic component having a first face and anopposing second face, the first face of the microelectronic component isbetween the second face of the microelectronic component and thesubstrate, the microelectronic component includes conductive contacts atthe first face of the microelectronic component, a conductive contact ofthe microelectronic component is conductively coupled, by aninterconnect, to a conductive contact of the substrate at the face ofthe substrate, and a conductive contact of the microelectronic componentis conductively coupled to a conductive contact at the first face of thebridge component; wherein the interconnect includes solder and amaterial between the solder and the conductive contact of the substrate,and the material extends beyond a surface of a surface insulationmaterial proximate to the conductive contact of the substrate.

Example C32 includes the subject matter of Example C31, and furtherspecifies that the substrate includes an organic dielectric material.

Example C33 includes the subject matter of any of Examples C31-32, andfurther specifies that the material includes a metal.

Example C34 includes the subject matter of Example C33, and furtherspecifies that the material includes a metal ball.

Example C35 includes the subject matter of Example C34, and furtherspecifies that the metal ball has a diameter that is between 10 micronsand 500 microns.

Example C36 includes the subject matter of Example C33, and furtherspecifies that the material includes a metal pillar.

Example C37 includes the subject matter of Example C36, and furtherspecifies that the metal pillar extends past a top surface of thesurface insulation material by a distance between 10 microns and 50microns.

Example C38 includes the subject matter of any of Examples C36-37, andfurther specifies that the metal pillar includes a surface finish on abulk metal.

Example C39 includes the subject matter of Example C38, and furtherspecifies that the bulk metal includes copper.

Example C40 includes the subject matter of any of Examples C38-39, andfurther specifies that the surface finish includes nickel, palladium, orgold.

Example C41 includes the subject matter of any of Examples C38-40, andfurther specifies that the bulk metal is undercut relative to thesurface finish.

Example C42 includes the subject matter of any of Examples C33-41, andfurther specifies that the metal includes copper.

Example C43 includes the subject matter of any of Examples C33-42, andfurther specifies that the metal includes nickel, palladium, or gold.

Example C44 includes the subject matter of any of Examples C31-32, andfurther specifies that the solder is a first solder, the material is asecond solder, and the first solder has a different material compositionthan the second solder.

Example C45 includes the subject matter of Example C44, and furtherspecifies that the second solder has a higher melting point than thefirst solder.

Example C46 includes the subject matter of any of Examples C44-45, andfurther includes: a third solder between the second solder and theconductive contact, wherein the third solder has a different materialcomposition than the second solder.

Example C47 includes the subject matter of Example C46, and furtherspecifies that the second solder has a higher melting point than thethird solder.

Example C48 includes the subject matter of any of Examples C31-47, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example C49 includes the subject matter of Example C48, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example C50 includes the subject matter of any of Examples C31-49, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example C51 includes the subject matter of any of Examples C31-50, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example C52 includes the subject matter of Example C51, and furtherspecifies that the bridge component is coupled to the dielectricmaterial.

Example C53 includes the subject matter of Example C52, and furtherspecifies that the bridge component is coupled to the dielectricmaterial by an adhesive.

Example C54 includes the subject matter of any of Examples C51-53, andfurther specifies that the bottom of the cavity is coplanar with abottom of the conductive contact.

Example C55 includes the subject matter of any of Examples C31-54, andfurther specifies that a bottom of the cavity has an undulating surface.

Example C56 includes the subject matter of Example C55, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example C57 includes the subject matter of Example C55, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example C58 includes the subject matter of any of Examples C31-57, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example C59 includes the subject matter of any of Examples C31-58, andfurther specifies that the bridge component includes a semiconductormaterial.

Example C60 includes the subject matter of any of Examples C31-59, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example C61 includes the subject matter of any of Examples C31-60, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example C62 includes the subject matter of any of Examples C31-61, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example C63 includes the subject matter of any of Examples C31-62, andfurther specifies that the microelectronic component includes a die.

Example C64 includes the subject matter of any of Examples C31-63, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example C65 includes the subject matter of Example C64, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example C66 includes the subject matter of any of Examples C31-65, andfurther specifies that the microelectronic component includes atransistor.

Example C67 includes the subject matter of any of Examples C31-66, andfurther specifies that the microelectronic component includes a memorydevice.

Example C68 includes the subject matter of any of Examples C31-67, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example C69 includes the subject matter of any of Examples C31-68, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example C70 includes the subject matter of Example C69, and furtherspecifies that the surface finish further includes palladium and gold.

Example C71 is an electronic device, including: a circuit board; and amicroelectronic assembly conductively coupled to the circuit board,wherein the microelectronic assembly includes: a substrate; a cavity ata face of the substrate; a bridge component in the cavity; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, a conductive contact of themicroelectronic component is coupled, by an interconnect, to aconductive contact of the substrate, and a conductive contact of themicroelectronic component is coupled to a conductive contact of thebridge component; wherein the conductive contact of the substrate is ata bottom of an opening in a surface insulation material, theinterconnect includes solder and a material, and the material fills amajority of a volume of the opening.

Example C72 includes the subject matter of Example C71, and furtherspecifies that the substrate includes an organic dielectric material.

Example C73 includes the subject matter of any of Examples C71-72, andfurther specifies that the material includes a metal.

Example C74 includes the subject matter of Example C73, and furtherspecifies that the material includes a metal ball.

Example C75 includes the subject matter of Example C74, and furtherspecifies that the metal ball has a diameter that is between 10 micronsand 500 microns.

Example C76 includes the subject matter of Example C73, and furtherspecifies that the material includes a metal pillar.

Example C77 includes the subject matter of Example C76, and furtherspecifies that the metal pillar extends past a top surface of thesurface insulation material by a distance between 10 microns and 50microns.

Example C78 includes the subject matter of any of Examples C76-77, andfurther specifies that the metal pillar includes a surface finish on abulk metal.

Example C79 includes the subject matter of Example C78, and furtherspecifies that the bulk metal includes copper.

Example C80 includes the subject matter of any of Examples C78-79, andfurther specifies that the surface finish includes nickel, palladium, orgold.

Example C81 includes the subject matter of any of Examples C78-80, andfurther specifies that the bulk metal is undercut relative to thesurface finish.

Example C82 includes the subject matter of any of Examples C73-81, andfurther specifies that the metal includes copper.

Example C83 includes the subject matter of any of Examples C73-82, andfurther specifies that the metal includes nickel, palladium, or gold.

Example C84 includes the subject matter of any of Examples C71-72, andfurther specifies that the solder is a first solder, the material is asecond solder, and the first solder has a different material compositionthan the second solder.

Example C85 includes the subject matter of Example C84, and furtherspecifies that the second solder has a higher melting point than thefirst solder.

Example C86 includes the subject matter of any of Examples C84-85, andfurther includes: a third solder between the second solder and theconductive contact of the substrate, wherein the third solder has adifferent material composition than the second solder.

Example C87 includes the subject matter of Example C86, and furtherspecifies that the second solder has a higher melting point than thethird solder.

Example C88 includes the subject matter of any of Examples C71-87, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example C89 includes the subject matter of any of Examples C88, andfurther specifies that the second conductive contact is a second-levelinterconnect contact.

Example C90 includes the subject matter of any of Examples C71-89, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example C91 includes the subject matter of any of Examples C71-90, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example C92 includes the subject matter of Example C91, and furtherspecifies that the bridge component is coupled to the dielectricmaterial.

Example C93 includes the subject matter of Example C92, and furtherspecifies that the bridge component is coupled to the dielectricmaterial by an adhesive.

Example C94 includes the subject matter of any of Examples C91-93, andfurther specifies that the bottom of the cavity is coplanar with abottom of the conductive contact.

Example C95 includes the subject matter of any of Examples C71-94, andfurther specifies that a bottom of the cavity has an undulating surface.

Example C96 includes the subject matter of Example C95, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example C97 includes the subject matter of Example C95, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example C98 includes the subject matter of any of Examples C71-97, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example C99 includes the subject matter of any of Examples C71-98, andfurther specifies that the bridge component includes a semiconductormaterial.

Example C100 includes the subject matter of any of Examples C71-99, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example C101 includes the subject matter of any of Examples C71-100, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example C102 includes the subject matter of any of Examples C71-101, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example C103 includes the subject matter of any of Examples C71-102, andfurther specifies that the microelectronic component includes a die.

Example C104 includes the subject matter of any of Examples C71-103, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example C105 includes the subject matter of Example C104, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example C106 includes the subject matter of any of Examples C71-105, andfurther specifies that the microelectronic component includes atransistor.

Example C107 includes the subject matter of any of Examples C71-106, andfurther specifies that the microelectronic component includes a memorydevice.

Example C108 includes the subject matter of any of Examples C71-107, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example C109 includes the subject matter of any of Examples C71-108, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example C110 includes the subject matter of Example C109, and furtherspecifies that the surface finish further includes palladium and gold.

Example C111 includes the subject matter of any of Examples C71-110, andfurther specifies that the electronic device is a handheld computingdevice, a laptop computing device, a wearable computing device, or aserver computing device.

Example C112 includes the subject matter of any of Examples C71-111, andfurther specifies that the circuit board is a motherboard.

Example C113 includes the subject matter of any of Examples C71-112, andfurther includes: a display communicatively coupled to the circuitboard.

Example C114 includes the subject matter of Example C113, and furtherspecifies that the display includes a touchscreen display.

Example C115 includes the subject matter of any of Examples C71-114, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

Example D1 is a microelectronic structure, including: a substrate; acavity at a face of the substrate; a first conductive contact of thesubstrate at a bottom of the cavity; a second conductive contact of thesubstrate outside the cavity; first solder on the first conductivecontact; and second solder on the second conductive contact, wherein thefirst solder and the second solder have different material compositions.

Example D2 includes the subject matter of Example D1, and furtherspecifies that the first solder and the second solder have differentmelting temperatures.

Example D3 includes the subject matter of any of Examples D1-2, andfurther specifies that the first solder has a higher melting point thanthe second solder.

Example D4 includes the subject matter of any of Examples D1-3, andfurther includes: a bridge component in the cavity, wherein the bridgecomponent includes a first face and an opposing second face, the secondface of the bridge component is between the first face of the bridgecomponent and the substrate, the bridge component includes a firstconductive contact at the first face of the bridge component, the bridgecomponent includes a second conductive contact at the second face of thebridge component, and the second conductive contact of the bridgecomponent is coupled to the first conductive contact of the substrate bythe first solder.

Example D5 includes the subject matter of any of Examples D1-4, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example D6 includes the subject matter of any of Examples D1-2, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the second conductive contact of the substrateis at a bottom of the opening.

Example D7 includes the subject matter of any of Examples D3-4, andfurther specifies that the face of the substrate is a first face of thesubstrate, the substrate further includes a second face of the substrateopposite to the first face of the substrate, and the substrate furtherincludes a third conductive contact at the second face of the substrate.

Example D8 includes the subject matter of Example D7, and furtherspecifies that the third conductive contact is a second-levelinterconnect contact.

Example D9 includes the subject matter of any of Examples D1-8, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example D10 includes the subject matter of any of Examples D1-9, andfurther specifies that a dielectric material of the substrate is at abottom of the cavity.

Example D11 includes the subject matter of any of Examples D1-10, andfurther specifies that the bridge component includes a semiconductormaterial.

Example D12 includes the subject matter of any of Examples D1-11, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example D13 is a microelectronic assembly, including: a substrate; acavity at a face of the substrate; a first conductive contact of thesubstrate outside the cavity; a bridge component in the cavity, whereinthe bridge component includes a first face and an opposing second face,the second face of the bridge component is between the first face of thebridge component and the substrate, and the bridge component includes asecond conductive contact at the first face of the bridge component; anda microelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, a first conductive contact of themicroelectronic component is conductively coupled to the firstconductive contact of the substrate, and a second conductive contact ofthe microelectronic component is conductively coupled, by aninterconnect, to the second conductive contact of the bridge component;wherein the interconnect includes a first solder material and a secondsolder material different from the first solder material.

Example D14 includes the subject matter of Example D13, and furtherspecifies that the first solder material is between the second soldermaterial and the second conductive contact of the microelectroniccomponent.

Example D15 includes the subject matter of any of Examples D13-14, andfurther specifies that the first solder material has a different meltingpoint than the second solder material.

Example D16 includes the subject matter of any of Examples D13-14, andfurther specifies that the first solder material has a higher meltingpoint than the second solder material.

Example D17 includes the subject matter of any of Examples D13-16, andfurther specifies that the interconnect is a first interconnect, thefirst conductive contact of the microelectronic component isconductively coupled to the first conductive contact of the substrate bya second interconnect, and the second interconnect includes a thirdsolder material and a fourth solder material different from the thirdsolder material.

Example D18 includes the subject matter of Example D17, and furtherspecifies that the third solder material is between the fourth soldermaterial and the first conductive contact of the microelectroniccomponent.

Example D19 includes the subject matter of any of Examples D17-18, andfurther specifies that the third solder material has a different meltingpoint than the fourth solder material.

Example D20 includes the subject matter of any of Examples D17-19, andfurther specifies that the third solder material has a higher meltingpoint than the fourth solder material.

Example D21 includes the subject matter of any of Examples D17-20, andfurther specifies that the second interconnect further includes a fifthsolder material different from the fourth solder material.

Example D22 includes the subject matter of Example D21, and furtherspecifies that the fourth solder material is between the fifth soldermaterial and the third solder material.

Example D23 includes the subject matter of any of Examples D21-22, andfurther specifies that the fourth solder material has a differentmelting point than the fifth solder material.

Example D24 includes the subject matter of any of Examples D21-23, andfurther specifies that the fourth solder material has a lower meltingpoint than the fifth solder material.

Example D25 includes the subject matter of any of Examples D21-24, andfurther specifies that the fifth solder material has a same materialcomposition as the third solder material.

Example D26 includes the subject matter of any of Examples D21-25, andfurther specifies that the fifth solder material has a same materialcomposition as the first solder material.

Example D27 includes the subject matter of any of Examples D17-26, andfurther specifies that the fourth solder material has a same materialcomposition as the second solder material.

Example D28 includes the subject matter of any of Examples D17-27, andfurther specifies that the third solder material has a same materialcomposition as the first solder material.

Example D29 includes the subject matter of any of Examples D13-16, andfurther specifies that the interconnect is a first interconnect, thefirst conductive contact of the microelectronic component isconductively coupled to the first conductive contact of the substrate bya second interconnect, and the second interconnect includes a thirdsolder material.

Example D30 includes the subject matter of Example D29, and furtherspecifies that the third solder material has a same material compositionas the first solder material.

Example D31 includes the subject matter of any of Examples D13-30, andfurther specifies that the substrate further includes a secondconductive contact in the cavity, the bridge component includes a thirdconductive contact at the second face of the bridge component, and thesecond conductive contact of the substrate is coupled to the thirdconductive contact of the bridge component by solder.

Example D32 includes the subject matter of Example D31, and furtherspecifies that the solder has a same material composition as the firstsolder.

Example D33 includes the subject matter of any of Examples D13-32, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example D34 includes the subject matter of any of Examples D13-32, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the first conductive contact of the substrateis at a bottom of the opening.

Example D35 includes the subject matter of any of Examples D13-34, andfurther specifies that the face of the substrate is a first face of thesubstrate, the substrate further includes a second face of the substrateopposite to the first face of the substrate, and the substrate furtherincludes a third conductive contact at the second face of the substrate.

Example D36 includes the subject matter of Example D35, and furtherspecifies that the third conductive contact is a second-levelinterconnect contact.

Example D37 includes the subject matter of any of Examples D13-36, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example D38 includes the subject matter of any of Examples D13-37, andfurther specifies that a bottom of the cavity has an undulating surface.

Example D39 includes the subject matter of Example D38, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example D40 includes the subject matter of Example D38, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example D41 includes the subject matter of any of Examples D13-40, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example D42 includes the subject matter of any of Examples D13-41, andfurther specifies that the bridge component includes a semiconductormaterial.

Example D43 includes the subject matter of any of Examples D13-42, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example D44 includes the subject matter of any of Examples D13-43, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example D45 includes the subject matter of any of Examples D13-44, andfurther specifies that the first conductive contact of themicroelectronic component has a different area than the secondconductive contact of the microelectronic component.

Example D46 includes the subject matter of any of Examples D13-45, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example D47 includes the subject matter of any of Examples D13-46, andfurther specifies that the microelectronic component includes a die.

Example D48 includes the subject matter of any of Examples D13-47, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example D49 includes the subject matter of Example D48, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example D50 includes the subject matter of any of Examples D13-49, andfurther specifies that the microelectronic component includes atransistor.

Example D51 includes the subject matter of any of Examples D13-50, andfurther specifies that the microelectronic component includes a memorydevice.

Example D52 includes the subject matter of any of Examples D13-51, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example D53 includes the subject matter of any of Examples D13-52, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example D54 includes the subject matter of Example D53, and furtherspecifies that the surface finish further includes palladium and gold.

Example D55 is an electronic device, including: a circuit board; and amicroelectronic assembly conductively coupled to the circuit board,wherein the microelectronic assembly includes: a substrate; a cavity ata face of the substrate; a bridge component in the cavity; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, a first conductive contact of themicroelectronic component is conductively coupled to the firstconductive contact of the substrate, and a second conductive contact ofthe microelectronic component is conductively coupled, by aninterconnect, to the second conductive contact of the bridge component;wherein the interconnect includes a first solder material and a secondsolder material different from the first solder material.

Example D56 includes the subject matter of Example D55, and furtherspecifies that the first solder material is between the second soldermaterial and the second conductive contact of the microelectroniccomponent.

Example D57 includes the subject matter of any of Examples D55-56, andfurther specifies that the first solder material has a different meltingpoint than the second solder material.

Example D58 includes the subject matter of any of Examples D55-56, andfurther specifies that the first solder material has a higher meltingpoint than the second solder material.

Example D59 includes the subject matter of any of Examples D55-58, andfurther specifies that the interconnect is a first interconnect, thefirst conductive contact of the microelectronic component isconductively coupled to the first conductive contact of the substrate bya second interconnect, and the second interconnect includes a thirdsolder material and a fourth solder material different from the thirdsolder material.

Example D60 includes the subject matter of Example D59, and furtherspecifies that the third solder material is between the fourth soldermaterial and the first conductive contact of the microelectroniccomponent.

Example D61 includes the subject matter of any of Examples D59-60, andfurther specifies that the third solder material has a different meltingpoint than the fourth solder material.

Example D62 includes the subject matter of any of Examples D59-61, andfurther specifies that the third solder material has a higher meltingpoint than the fourth solder material.

Example D63 includes the subject matter of any of Examples D59-62, andfurther specifies that the second interconnect further includes a fifthsolder material different from the fourth solder material.

Example D64 includes the subject matter of Example D63, and furtherspecifies that the fourth solder material is between the fifth soldermaterial and the third solder material.

Example D65 includes the subject matter of any of Examples D63-64, andfurther specifies that the fourth solder material has a differentmelting point than the fifth solder material.

Example D66 includes the subject matter of any of Examples D63-65, andfurther specifies that the fourth solder material has a lower meltingpoint than the fifth solder material.

Example D67 includes the subject matter of any of Examples D63-66, andfurther specifies that the fifth solder material has a same materialcomposition as the third solder material.

Example D68 includes the subject matter of any of Examples D63-67, andfurther specifies that the fifth solder material has a same materialcomposition as the first solder material.

Example D69 includes the subject matter of any of Examples D59-68, andfurther specifies that the fourth solder material has a same materialcomposition as the second solder material.

Example D70 includes the subject matter of any of Examples D59-69, andfurther specifies that the third solder material has a same materialcomposition as the first solder material.

Example D71 includes the subject matter of any of Examples D55-58, andfurther specifies that the interconnect is a first interconnect, thefirst conductive contact of the microelectronic component isconductively coupled to the first conductive contact of the substrate bya second interconnect, and the second interconnect includes a thirdsolder material.

Example D72 includes the subject matter of Example D71, and furtherspecifies that the third solder material has a same material compositionas the first solder material.

Example D73 includes the subject matter of any of Examples D55-72, andfurther specifies that the substrate further includes a secondconductive contact in the cavity, the bridge component includes a thirdconductive contact at the second face of the bridge component, and thesecond conductive contact of the substrate is coupled to the thirdconductive contact of the bridge component by solder.

Example D74 includes the subject matter of any of Examples D73, andfurther specifies that the solder has a same material composition as thefirst solder.

Example D75 includes the subject matter of any of Examples D55-74, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example D76 includes the subject matter of any of Examples D55-75, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, the surface insulation materialincludes an opening, and the conductive contact of the substrate is at abottom of the opening.

Example D77 includes the subject matter of any of Examples D55-76, andfurther specifies that the face of the substrate is a first face of thesubstrate, the substrate further includes a second face of the substrateopposite to the first face of the substrate, and the substrate furtherincludes a third conductive contact at the second face of the substrate.

Example D78 includes the subject matter of Example D77, and furtherspecifies that the third conductive contact is a second-levelinterconnect contact.

Example D79 includes the subject matter of any of Examples D55-78, andfurther specifies that the first conductive contact of themicroelectronic component has a different area than the secondconductive contact of the microelectronic component.

Example D80 includes the subject matter of any of Examples D55-79, andfurther specifies that the first conductive contact of themicroelectronic component has a larger area than the second conductivecontact of the microelectronic component.

Example D81 includes the subject matter of any of Examples D55-80, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example D82 includes the subject matter of any of Examples D55-81, andfurther specifies that a bottom of the cavity has an undulating surface.

Example D83 includes the subject matter of Example D82, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example D84 includes the subject matter of Example D82, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example D85 includes the subject matter of any of Examples D55-84, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example D86 includes the subject matter of any of Examples D55-85, andfurther specifies that the bridge component includes a semiconductormaterial.

Example D87 includes the subject matter of any of Examples D55-86, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example D88 includes the subject matter of any of Examples D55-87, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example D89 includes the subject matter of any of Examples D55-88, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example D90 includes the subject matter of any of Examples D55-89, andfurther specifies that the microelectronic component includes a die.

Example D91 includes the subject matter of any of Examples D55-90, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example D92 includes the subject matter of Example D91, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example D93 includes the subject matter of any of Examples D55-92, andfurther specifies that the microelectronic component includes atransistor.

Example D94 includes the subject matter of any of Examples D55-93, andfurther specifies that the microelectronic component includes a memorydevice.

Example D95 includes the subject matter of any of Examples D55-94, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example D96 includes the subject matter of any of Examples D55-95, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example D97 includes the subject matter of Example D96, and furtherspecifies that the surface finish further includes palladium and gold.

Example D98 includes the subject matter of any of Examples D55-97, andfurther specifies that the electronic device is a handheld computingdevice, a laptop computing device, a wearable computing device, or aserver computing device.

Example D99 includes the subject matter of any of Examples D55-98, andfurther specifies that the circuit board is a motherboard.

Example D100 includes the subject matter of any of Examples D55-99, andfurther includes: a display communicatively coupled to the circuitboard.

Example D101 includes the subject matter of Example D100, and furtherspecifies that the display includes a touchscreen display.

Example D102 includes the subject matter of any of Examples D55-101, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

Example E1 is a microelectronic structure, including: a substrate; acavity at a face of the substrate; a first conductive contact in thecavity; and a bridge component in the cavity, wherein the bridgecomponent includes a first face and an opposing second face, the secondface of the bridge component is between the first face of the bridgecomponent and the substrate, and the bridge component includes a secondconductive contact at the second face of the bridge component; whereinthe first conductive contact is electrically coupled to the secondconductive contact, and the first conductive contact in the cavity has anon-planar contact surface.

Example E2 includes the subject matter of Example E1, and furtherspecifies that the substrate includes an organic dielectric material.

Example E3 includes the subject matter of any of Examples E1-2, andfurther specifies that the substrate includes a third conductive contactoutside the cavity at the face of the substrate, the substrate includessurface insulation material at the face of the substrate, the surfaceinsulation material includes an opening, and the third conductivecontact of the substrate is at a bottom of the opening.

Example E4 includes the subject matter of Example E3, and furtherincludes: solder on the third conductive contact of the substrate.

Example E5 includes the subject matter of any of Examples E3-4, andfurther specifies that the face of the substrate is a first face of thesubstrate, the substrate further includes a second face of the substrateopposite to the first face of the substrate, and the substrate furtherincludes a third conductive contact at the second face of the substrate.

Example E6 includes the subject matter of Example E5, and furtherspecifies that the third conductive contact is a second-levelinterconnect contact.

Example E7 includes the subject matter of any of Examples E1-6, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example E8 includes the subject matter of any of Examples E1-7, andfurther specifies that the first conductive contact includes a wire.

Example E9 includes the subject matter of Example E8, and furtherspecifies that the wire includes copper, silver, or gold.

Example E10 includes the subject matter of any of Examples E1-9, andfurther specifies that the contact surface includes a pointed shape.

Example E11 includes the subject matter of any of Examples E1-9, andfurther specifies that the contact surface has an arc shape.

Example E12 includes the subject matter of any of Examples E11, andfurther specifies that the first conductive contact includes a dome ofmultiple wires.

Example E13 includes the subject matter of any of Examples E1-9, andfurther specifies that the first conductive contact includes acantilever.

Example E14 includes the subject matter of any of Examples E1-13, andfurther specifies that the first conductive contact includes a wire thatis wirebonded to metal of a metal layer of the substrate.

Example E15 includes the subject matter of any of Examples E1-14, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, and the cavity extends at leastthrough the surface insulation material.

Example E16 includes the subject matter of Example E15, and furtherspecifies that the cavity extends past the surface insulation materialinto a dielectric material of the substrate.

Example E17 includes the subject matter of any of Examples E15-16, andfurther specifies that the first conductive contact does not extend pasta plane of a lower surface of the surface insulation material.

Example E18 includes the subject matter of any of Examples E1-17, andfurther specifies that the first conductive contact is electricallycoupled to the second conductive contact by solder.

Example E19 includes the subject matter of any of Examples E1-18, andfurther specifies that the first conductive contact is one of aplurality of first conductive contacts in a cavity of the substrate, andthe plurality of first conductive contacts have non-planar contactsurfaces.

Example E20 includes the subject matter of any of Examples E1-19, andfurther includes: an underfill material between the second face of thebridge component and the substrate.

Example E21 includes the subject matter of Example E20, and furtherspecifies that the first conductive contact includes a wire, and theunderfill material is around the wire.

Example E22 includes the subject matter of any of Examples E1-21, andfurther specifies that the bridge component includes a conductivepathway between the second conductive contact of the bridge componentand a conductive contact on the first face of the bridge component.

Example E23 includes the subject matter of any of Examples E1-22, andfurther specifies that the bridge component does not contact adielectric material of the substrate.

Example E24 includes the subject matter of any of Examples E1-23, andfurther specifies that the bridge component includes a transistor.

Example E25 includes the subject matter of any of Examples E1-24, andfurther specifies that a bottom of the cavity has an undulating surface.

Example E26 includes the subject matter of Example E25, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example E27 includes the subject matter of Example E25, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example E28 includes the subject matter of any of Examples E1-27, andfurther specifies that the surface insulation material has a thicknessbetween 10 microns and 30 microns.

Example E29 includes the subject matter of any of Examples E1-28, andfurther specifies that the bridge component includes a semiconductormaterial.

Example E30 includes the subject matter of any of Examples E1-29, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example E31 is a microelectronic assembly, including: a substrate; acavity at a face of the substrate; a first conductive contact in thecavity, wherein the first conductive contact has a non-planar contactsurface; a bridge component in the cavity, wherein the bridge componentincludes a first face and an opposing second face, the second face ofthe bridge component is between the first face of the bridge componentand the substrate, and the bridge component includes a second conductivecontact at the first face of the bridge component; and a microelectroniccomponent having a first face and an opposing second face, the firstface of the microelectronic component is between the second face of themicroelectronic component and the substrate, the microelectroniccomponent includes conductive contacts at the first face of themicroelectronic component, some of the conductive contacts of themicroelectronic component are conductively coupled to conductivecontacts of the substrate at the face of the substrate, and some of theconductive contacts of the microelectronic component are conductivelycoupled to conductive contacts at the first face of the bridgecomponent.

Example E32 includes the subject matter of Example E31, and furtherspecifies that the substrate includes an organic dielectric material.

Example E33 includes the subject matter of any of Examples E31-32, andfurther specifies that the substrate includes a third conductive contactoutside the cavity at the face of the substrate, the substrate includessurface insulation material at the face of the substrate, the surfaceinsulation material includes an opening, and the third conductivecontact of the substrate is at a bottom of the opening.

Example E34 includes the subject matter of Example E33, and furtherincludes: solder on the third conductive contact of the substrate.

Example E35 includes the subject matter of any of Examples E33-34, andfurther specifies that the face of the substrate is a first face of thesubstrate, the substrate further includes a second face of the substrateopposite to the first face of the substrate, and the substrate furtherincludes a third conductive contact at the second face of the substrate.

Example E36 includes the subject matter of Example E35, and furtherspecifies that the third conductive contact is a second-levelinterconnect contact.

Example E37 includes the subject matter of any of Examples E31-36, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example E38 includes the subject matter of any of Examples E31-37, andfurther specifies that the first conductive contact includes a wire.

Example E39 includes the subject matter of Example E38, and furtherspecifies that the wire includes copper, silver, or gold.

Example E40 includes the subject matter of any of Examples E31-39, andfurther specifies that the first conductive contact has a point thatextends towards the second conductive contact.

Example E41 includes the subject matter of any of Examples E31-39, andfurther specifies that the first conductive contact has an arc thatextends towards the second conductive contact.

Example E42 includes the subject matter of Example E41, and furtherspecifies that the first conductive contact includes a dome of multiplewires.

Example E43 includes the subject matter of any of Examples E31-39, andfurther specifies that the first conductive contact includes acantilever.

Example E44 includes the subject matter of any of Examples E31-43, andfurther specifies that the first conductive contact includes a wire thatis wirebonded to metal of a metal layer of the substrate.

Example E45 includes the subject matter of any of Examples E31-44, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, and the cavity extends at leastthrough the surface insulation material.

Example E46 includes the subject matter of Example E45, and furtherspecifies that the cavity extends past the surface insulation materialinto a dielectric material of the substrate.

Example E47 includes the subject matter of any of Examples E45-46, andfurther specifies that the first conductive contact does not extend pasta plane of a lower surface of the surface insulation material.

Example E48 includes the subject matter of any of Examples E31-47, andfurther specifies that the first conductive contact is electricallycoupled to the second conductive contact by solder.

Example E49 includes the subject matter of any of Examples E31-48, andfurther specifies that the first conductive contact is one of aplurality of first conductive contacts in a cavity of the substrate, andthe plurality of first conductive contacts have non-planar contactsurfaces.

Example E50 includes the subject matter of any of Examples E31-49, andfurther includes: an underfill material between the second face of thebridge component and the substrate.

Example E51 includes the subject matter of Example E50, and furtherspecifies that the first conductive contact includes a wire, and theunderfill material is around the wire.

Example E52 includes the subject matter of any of Examples E31-51, andfurther specifies that the bridge component includes a conductivepathway between the second conductive contact of the bridge componentand a conductive contact on the first face of the bridge component.

Example E53 includes the subject matter of any of Examples E31-52, andfurther specifies that the bridge component does not contact adielectric material of the substrate.

Example E54 includes the subject matter of any of Examples E31-53, andfurther specifies that the bridge component includes a transistor.

Example E55 includes the subject matter of any of Examples E31-54, andfurther specifies that a bottom of the cavity has an undulating surface.

Example E56 includes the subject matter of Example E55, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example E57 includes the subject matter of Example E55, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example E58 includes the subject matter of any of Examples E31-57, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example E59 includes the subject matter of any of Examples E31-58, andfurther specifies that the bridge component includes a semiconductormaterial.

Example E60 includes the subject matter of any of Examples E31-59, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example E61 includes the subject matter of any of Examples E31-60, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example E62 includes the subject matter of any of Examples E31-61, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example E63 includes the subject matter of any of Examples E31-62, andfurther specifies that the microelectronic component includes a die.

Example E64 includes the subject matter of any of Examples E31-63, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example E65 includes the subject matter of Example E64, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example E66 includes the subject matter of any of Examples E31-65, andfurther specifies that the microelectronic component includes atransistor.

Example E67 includes the subject matter of any of Examples E31-66, andfurther specifies that the microelectronic component includes a memorydevice.

Example E68 includes the subject matter of any of Examples E31-67, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example E69 includes the subject matter of any of Examples E31-68, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example E70 includes the subject matter of Example E69, and furtherspecifies that the surface finish further includes palladium and gold.

Example E71 is an electronic device, including: a circuit board; and amicroelectronic assembly conductively coupled to the circuit board,wherein the microelectronic assembly includes: a substrate; a cavity ata face of the substrate; a first conductive contact in the cavity; abridge component in the cavity, wherein the bridge component includes asecond conductive contact that faces and is coupled to the firstconductive contact, the first conductive contact has a surface, thesurface faces the bridge component, and the surface is not flat; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, some of the conductive contacts of themicroelectronic component are coupled by solder to conductive contactsof the substrate, and some of the conductive contacts of themicroelectronic component are coupled by solder to conductive contactsof the bridge component.

Example E72 includes the subject matter of Example E71, and furtherspecifies that the substrate includes an organic dielectric material.

Example E73 includes the subject matter of any of Examples E71-72, andfurther specifies that the substrate includes a third conductive contactoutside the cavity at the face of the substrate, the substrate includessurface insulation material at the face of the substrate, the surfaceinsulation material includes an opening, and the third conductivecontact of the substrate is at a bottom of the opening.

Example E74 includes the subject matter of Example E73, and furtherincludes: solder on the third conductive contact of the substrate.

Example E75 includes the subject matter of any of Examples E73-74, andfurther specifies that the face of the substrate is a first face of thesubstrate, the substrate further includes a second face of the substrateopposite to the first face of the substrate, and the substrate furtherincludes a third conductive contact at the second face of the substrate.

Example E76 includes the subject matter of Example E75, and furtherspecifies that the third conductive contact is a second-levelinterconnect contact.

Example E77 includes the subject matter of any of Examples E71-76, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example E78 includes the subject matter of any of Examples E71-77, andfurther specifies that the first conductive contact includes a wire.

Example E79 includes the subject matter of Example E78, and furtherspecifies that the wire includes copper, silver, or gold.

Example E80 includes the subject matter of any of Examples E71-79, andfurther specifies that the surface includes a pointed shape.

Example E81 includes the subject matter of any of Examples E71-79, andfurther specifies that the surface includes an arc shape.

Example E82 includes the subject matter of Example E81, and furtherspecifies that the first conductive contact includes a dome of multiplewires.

Example E83 includes the subject matter of any of Examples E71-79, andfurther specifies that the first conductive contact includes acantilever.

Example E84 includes the subject matter of any of Examples E71-83, andfurther specifies that the first conductive contact includes a wire thatis wirebonded to metal of a metal layer of the substrate.

Example E85 includes the subject matter of any of Examples E71-84, andfurther specifies that the substrate includes a surface insulationmaterial at the face of the substrate, and the cavity extends at leastthrough the surface insulation material.

Example E86 includes the subject matter of Example E85, and furtherspecifies that the cavity extends past the surface insulation materialinto a dielectric material of the substrate.

Example E87 includes the subject matter of any of Examples E85-86, andfurther specifies that the first conductive contact does not extend pasta plane of a lower surface of the surface insulation material.

Example E88 includes the subject matter of any of Examples E71-87, andfurther specifies that the first conductive contact is electricallycoupled to the second conductive contact by solder.

Example E89 includes the subject matter of any of Examples E71-88, andfurther specifies that the first conductive contact is one of aplurality of first conductive contacts in a cavity of the substrate, andthe plurality of first conductive contacts have non-planar contactsurfaces.

Example E90 includes the subject matter of any of Examples E71-89, andfurther includes: an underfill material between the second face of thebridge component and the substrate.

Example E91 includes the subject matter of Example E90, and furtherspecifies that the first conductive contact includes a wire, and theunderfill material is around the wire.

Example E92 includes the subject matter of any of Examples E71-91, andfurther specifies that the bridge component includes a conductivepathway between the second conductive contact of the bridge componentand a conductive contact on the first face of the bridge component.

Example E93 includes the subject matter of any of Examples E71-92, andfurther specifies that the bridge component does not contact adielectric material of the substrate.

Example E94 includes the subject matter of any of Examples E71-93, andfurther specifies that the bridge component includes a transistor.

Example E95 includes the subject matter of any of Examples E71-94, andfurther specifies that a bottom of the cavity has an undulating surface.

Example E96 includes the subject matter of Example E95, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example E97 includes the subject matter of Example E95, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example E98 includes the subject matter of any of Examples E71-97, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example E99 includes the subject matter of any of Examples E71-98, andfurther specifies that the bridge component includes a semiconductormaterial.

Example E100 includes the subject matter of any of Examples E71-99, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example E101 includes the subject matter of any of Examples E71-100, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example E102 includes the subject matter of any of Examples E71-101, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example E103 includes the subject matter of any of Examples E71-102, andfurther specifies that the microelectronic component includes a die.

Example E104 includes the subject matter of any of Examples E71-103, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example E105 includes the subject matter of Example E104, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example E106 includes the subject matter of any of Examples E71-105, andfurther specifies that the microelectronic component includes atransistor.

Example E107 includes the subject matter of any of Examples E71-106, andfurther specifies that the microelectronic component includes a memorydevice.

Example E108 includes the subject matter of any of Examples E71-107, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example E109 includes the subject matter of any of Examples E71-108, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example E110 includes the subject matter of Example E109, and furtherspecifies that the surface finish further includes palladium and gold.

Example E111 includes the subject matter of any of Examples E71-110, andfurther specifies that the electronic device is a handheld computingdevice, a laptop computing device, a wearable computing device, or aserver computing device.

Example E112 includes the subject matter of any of Examples E71-111, andfurther specifies that the circuit board is a motherboard.

Example E113 includes the subject matter of any of Examples E71-112, andfurther includes: a display communicatively coupled to the circuitboard.

Example E114 includes the subject matter of Example E113, and furtherspecifies that the display includes a touchscreen display.

Example E115 includes the subject matter of any of Examples E71-114, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

Example F1 is a microelectronic structure, including: a substrate; acavity at a face of the substrate; and a bridge component in the cavity,wherein the bridge component includes a first face and an opposingsecond face, the second face of the bridge component is between thefirst face of the bridge component and the substrate, the bridgecomponent includes a first interconnect material at the first face ofthe bridge component, the bridge component includes a secondinterconnect material at the second face of the bridge component, andthe first interconnect material has a different material compositionthan the second interconnect material.

Example F2 includes the subject matter of Example F1, and furtherspecifies that the first interconnect material includes solder.

Example F3 includes the subject matter of Example F2, and furtherspecifies that the solder of the first interconnect material is a firstsolder, the second interconnect material includes a second solder, andthe second solder has a different material composition than the firstsolder.

Example F4 includes the subject matter of Example F3, and furtherspecifies that the first solder has a different melting point than thesecond solder.

Example F5 includes the subject matter of any of Examples F3-4, andfurther specifies that the first solder has a higher melting point thanthe second solder.

Example F6 includes the subject matter of any of Examples F3-5, andfurther specifies that the first solder has a melting point above 200degrees Celsius, and the second solder has a melting point below 200degrees Celsius.

Example F7 includes the subject matter of any of Examples F1-6, andfurther includes: a polymer material around the second interconnectmaterial.

Example F8 includes the subject matter of any of Examples F1-7, andfurther includes: an epoxy material between the second face of thebridge component and the cavity.

Example F9 includes the subject matter of Example F8, and furtherspecifies that the epoxy material includes an epoxy flux dot.

Example F10 includes the subject matter of Example F8, and furtherspecifies that the epoxy material includes an epoxy flux film.

Example F11 includes the subject matter of any of Examples F1-2, andfurther specifies that the second interconnect material includes aconductive adhesive, and the conductive adhesive includes a polymer.

Example F12 includes the subject matter of any of Examples F1-2, andfurther specifies that the second interconnect material includes anintermetallic compound (IMC).

Example F13 includes the subject matter of Example F12, and furtherspecifies that the IMC includes high-temperature solder particles andlow-temperature solder particles.

Example F14 includes the subject matter of any of Examples F1-2, andfurther specifies that the second interconnect material includes atransient liquid phase sintering (TLPS) material.

Example F15 includes the subject matter of any of Examples F1-2 and 14,and further specifies that the second interconnect material includes apolymer, copper, and tin.

Example F16 includes the subject matter of any of Examples F1-15, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example F17 includes the subject matter of any of Examples F1-16, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, the surface insulation material includes anopening, and the conductive contact of the substrate is at a bottom ofthe opening.

Example F18 includes the subject matter of Example F17, and furtherincludes: solder on the conductive contact of the substrate.

Example F19 includes the subject matter of any of Examples F17-18, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example F20 includes the subject matter of Example F19, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example F21 includes the subject matter of any of Examples F1-20, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example F22 includes the subject matter of any of Examples F1-21, andfurther includes: a conductive contact at a bottom of the cavity,wherein the second conductive contact of the bridge component is coupledto the conductive contact by the second interconnect material.

Example F23 includes the subject matter of Example F22, and furtherspecifies that the conductive contact is part of an N−1 metal layer ofthe substrate.

Example F24 includes the subject matter of any of Examples F1-23, andfurther specifies that the cavity extends past surface insulationmaterial at the face of the substrate.

Example F25 includes the subject matter of any of Examples F1-24, andfurther specifies that a bottom of the cavity has an undulating surface.

Example F26 includes the subject matter of Example F25, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example F27 includes the subject matter of Example F25, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example F28 includes the subject matter of any of Examples F1-27, andfurther specifies that the surface insulation material has a thicknessbetween 10 microns and 30 microns.

Example F29 includes the subject matter of any of Examples F1-28, andfurther specifies that the bridge component includes a semiconductormaterial.

Example F30 includes the subject matter of any of Examples F1-29, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example F31 is a microelectronic assembly, including: a substrate; acavity at a face of the substrate; a bridge component in the cavity,wherein the bridge component includes a first face and an opposingsecond face, the second face of the bridge component is between thefirst face of the bridge component and the substrate, the bridgecomponent includes a first conductive contact at the first face of thebridge component, the bridge component includes a second conductivecontact at the second face of the bridge component, and the substrateincludes a third conductive contact at a bottom of the cavity; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, a fourth conductive contact of themicroelectronic component is conductively coupled to a fifth conductivecontact of the substrate at the face of the substrate, and a sixthconductive contact of the microelectronic component is conductivelycoupled to the first conductive contact at the first face of the bridgecomponent; a first interconnect material between the first conductivecontact and the sixth conductive contact; and a second interconnectmaterial between the second conductive contact and the third conductivecontact, wherein the second interconnect material has a differentmelting point than the first interconnect material.

Example F32 includes the subject matter of Example F31, and furtherspecifies that the first interconnect material includes solder.

Example F33 includes the subject matter of Example F32, and furtherspecifies that the solder of the first interconnect material is a firstsolder, the second interconnect material includes a second solder, andthe second solder has a different material composition than the firstsolder.

Example F34 includes the subject matter of Example F33, and furtherspecifies that the first solder has a lower indium content than thesecond solder.

Example F35 includes the subject matter of any of Examples F33-34, andfurther specifies that the first solder has a higher melting point thanthe second solder.

Example F36 includes the subject matter of any of Examples F33-35, andfurther specifies that the first solder has a melting point above 200degrees Celsius, and the second solder has a melting point below 200degrees Celsius.

Example F37 includes the subject matter of any of Examples F31-36, andfurther includes: a polymer material around the second interconnectmaterial.

Example F38 includes the subject matter of any of Examples F31-37, andfurther includes: an epoxy material between the second face of thebridge component and the cavity.

Example F39 includes the subject matter of Example F38, and furtherspecifies that the epoxy material includes an epoxy flux dot.

Example F40 includes the subject matter of Example F38, and furtherspecifies that the epoxy material includes an epoxy flux film.

Example F41 includes the subject matter of any of Examples F31-32, andfurther specifies that the second interconnect material includes aconductive adhesive, and the conductive adhesive includes a polymer.

Example F42 includes the subject matter of any of Examples F31-32, andfurther specifies that the second interconnect material includes anintermetallic compound (IMC).

Example F43 includes the subject matter of Example F42, and furtherspecifies that the IMC includes high-temperature solder particles andlow-temperature solder particles.

Example F44 includes the subject matter of any of Examples F31-32, andfurther specifies that the second interconnect material includes atransient liquid phase sintering (TLPS) material.

Example F45 includes the subject matter of any of Examples F31-32 and44, and further specifies that the second interconnect material includesa polymer, copper, and tin.

Example F46 includes the subject matter of any of Examples F31-45, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example F47 includes the subject matter of any of Examples F31-46, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, the surface insulation material includes anopening, and the conductive contact of the substrate is at a bottom ofthe opening.

Example F48 includes the subject matter of Example F47, and furtherincludes: solder on the conductive contact of the substrate.

Example F49 includes the subject matter of any of Examples F47-48, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example F50 includes the subject matter of Example F49, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example F51 includes the subject matter of any of Examples F31-50, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example F52 includes the subject matter of any of Examples F31-51, andfurther includes: a conductive contact at a bottom of the cavity,wherein the second conductive contact of the bridge component is coupledto the conductive contact by the second interconnect material.

Example F53 includes the subject matter of Example F52, and furtherspecifies that the conductive contact is part of an N−1 metal layer ofthe substrate.

Example F54 includes the subject matter of any of Examples F31-53, andfurther specifies that the cavity extends past surface insulationmaterial at the face of the substrate.

Example F55 includes the subject matter of any of Examples F31-54, andfurther specifies that a bottom of the cavity has an undulating surface.

Example F56 includes the subject matter of Example F55, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example F57 includes the subject matter of Example F55, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example F58 includes the subject matter of any of Examples F31-57, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example F59 includes the subject matter of any of Examples F31-58, andfurther specifies that the bridge component includes a semiconductormaterial.

Example F60 includes the subject matter of any of Examples F31-59, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example F61 includes the subject matter of any of Examples F31-60, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example F62 includes the subject matter of any of Examples F31-61, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example F63 includes the subject matter of any of Examples F31-62, andfurther specifies that the microelectronic component includes a die.

Example F64 includes the subject matter of any of Examples F31-63, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example F65 includes the subject matter of Example F64, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example F66 includes the subject matter of any of Examples F31-65, andfurther specifies that the microelectronic component includes atransistor.

Example F67 includes the subject matter of any of Examples F31-66, andfurther specifies that the microelectronic component includes a memorydevice.

Example F68 includes the subject matter of any of Examples F31-67, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example F69 includes the subject matter of any of Examples F31-68, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example F70 includes the subject matter of Example F69, and furtherspecifies that the surface finish further includes palladium and gold.

Example F71 is an electronic device, including: a circuit board; and amicroelectronic assembly conductively coupled to the circuit board,wherein the microelectronic assembly includes: a substrate; a cavity ata face of the substrate; a bridge component in the cavity, wherein someof the conductive contacts of the bridge component are coupled toconductive contacts of the substrate; and a microelectronic componenthaving a first face and an opposing second face, the first face of themicroelectronic component is between the second face of themicroelectronic component and the substrate, the microelectroniccomponent includes conductive contacts at the first face of themicroelectronic component, some of the conductive contacts of themicroelectronic component are coupled to conductive contacts of thesubstrate, and some of the conductive contacts of the microelectroniccomponent are coupled to conductive contacts of the bridge component;wherein some of the conductive contacts of the bridge component arecoupled to conductive contacts of the substrate by second interconnectmaterial, and some of the conductive contacts of the microelectroniccomponent are coupled to conductive contacts of the bridge component byfirst interconnect material.

Example F72 includes the subject matter of Example F71, and furtherspecifies that the first interconnect material includes solder.

Example F73 includes the subject matter of Example F72, and furtherspecifies that the solder of the first interconnect material is a firstsolder, the second interconnect material includes a second solder, andthe second solder has a different material composition than the firstsolder.

Example F74 includes the subject matter of Example F73, and furtherspecifies that the first solder has a different melting point than thesecond solder.

Example F75 includes the subject matter of any of Examples F73-74, andfurther specifies that the first solder has a higher melting point thanthe second solder.

Example F76 includes the subject matter of any of Examples F73-75, andfurther specifies that the first solder has a melting point above 200degrees Celsius, and the second solder has a melting point below 200degrees Celsius.

Example F77 includes the subject matter of any of Examples F71-76, andfurther includes: a polymer material around the second interconnectmaterial.

Example F78 includes the subject matter of any of Examples F71-77, andfurther includes: an epoxy material between the second face of thebridge component and the cavity.

Example F79 includes the subject matter of Example F78, and furtherspecifies that the epoxy material includes an epoxy flux dot.

Example F80 includes the subject matter of Example F78, and furtherspecifies that the epoxy material includes an epoxy flux film.

Example F81 includes the subject matter of any of Examples F71-72, andfurther specifies that the second interconnect material includes aconductive adhesive, and the conductive adhesive includes a polymer.

Example F82 includes the subject matter of any of Examples F71-72, andfurther specifies that the second interconnect material includes anintermetallic compound (IMC).

Example F83 includes the subject matter of Example F82, and furtherspecifies that the IMC includes high-temperature solder particles andlow-temperature solder particles.

Example F84 includes the subject matter of any of Examples F71-72, andfurther specifies that the second interconnect material includes atransient liquid phase sintering (TLPS) material.

Example F85 includes the subject matter of any of Examples F71-72 and84, and further specifies that the second interconnect material includesa polymer, copper, and tin.

Example F86 includes the subject matter of any of Examples F71-85, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example F87 includes the subject matter of any of Examples F71-86, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, the surface insulation material includes anopening, and the conductive contact of the substrate is at a bottom ofthe opening.

Example F88 includes the subject matter of Example F87, and furtherincludes: solder on the conductive contact of the substrate.

Example F89 includes the subject matter of any of Examples F87-88, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example F90 includes the subject matter of Example F89, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example F91 includes the subject matter of any of Examples F71-90, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example F92 includes the subject matter of any of Examples F71-91, andfurther includes: a conductive contact at a bottom of the cavity,wherein the second conductive contact of the bridge component is coupledto the conductive contact by the second interconnect material.

Example F93 includes the subject matter of Example F92, and furtherspecifies that the conductive contact is part of an N−1 metal layer ofthe substrate.

Example F94 includes the subject matter of any of Examples F71-93, andfurther specifies that the cavity extends past surface insulationmaterial at the face of the substrate.

Example F95 includes the subject matter of any of Examples F71-94, andfurther specifies that a bottom of the cavity has an undulating surface.

Example F96 includes the subject matter of Example F95, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example F97 includes the subject matter of Example F95, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example F98 includes the subject matter of any of Examples F71-97, andfurther specifies that surface insulation material at the face of thesubstrate has a thickness between 10 microns and 30 microns.

Example F99 includes the subject matter of any of Examples F71-98, andfurther specifies that the bridge component includes a semiconductormaterial.

Example F100 includes the subject matter of any of Examples F71-99, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example F101 includes the subject matter of any of Examples F71-100, andfurther specifies that a pitch of conductive contacts of the substrateis greater than a pitch of conductive contacts of the bridge component.

Example F102 includes the subject matter of any of Examples F71-101, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example F103 includes the subject matter of any of Examples F71-102, andfurther specifies that the microelectronic component includes a die.

Example F104 includes the subject matter of any of Examples F71-103, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example F105 includes the subject matter of Example F104, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example F106 includes the subject matter of any of Examples F71-105, andfurther specifies that the microelectronic component includes atransistor.

Example F107 includes the subject matter of any of Examples F71-106, andfurther specifies that the microelectronic component includes a memorydevice.

Example F108 includes the subject matter of any of Examples F71-107, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example F109 includes the subject matter of any of Examples F71-108, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example F110 includes the subject matter of Example F109, and furtherspecifies that the surface finish further includes palladium and gold.

Example F111 includes the subject matter of any of Examples F71-110, andfurther specifies that the electronic device is a handheld computingdevice, a laptop computing device, a wearable computing device, or aserver computing device.

Example F112 includes the subject matter of any of Examples F71-111, andfurther specifies that the circuit board is a motherboard.

Example F113 includes the subject matter of any of Examples F71-112, andfurther includes: a display communicatively coupled to the circuitboard.

Example F114 includes the subject matter of Example F113, and furtherspecifies that the display includes a touchscreen display.

Example F115 includes the subject matter of any of Examples F71-114, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

Example G1 is a microelectronic structure, including: a substrate; acavity in the substrate, wherein metal of a first metal layer in thesubstrate, and metal of a second metal layer in the substrate, areexposed in the cavity; and a bridge component in the cavity, wherein thebridge component includes a first face and an opposing second face, thesecond face of the bridge component is between the first face of thebridge component and the substrate, the bridge component includes aconductive contact at the first face of the bridge component, the bridgecomponent includes a second conductive contact at the second face of thebridge component, the second conductive contact is electrically coupledto metal of the first metal layer or the first metal layer, and aportion of the first metal layer is between the bridge component and thesecond metal layer.

Example G2 includes the subject matter of Example G1, and furtherspecifies that the second conductive contact is electrically coupled tometal of the first metal layer.

Example G3 includes the subject matter of Example G2, and furtherspecifies that metal of the first metal layer and the second metal layertogether provide a bottom of the cavity.

Example G4 includes the subject matter of Example G2, and furtherspecifies that the substrate further includes a third metal layer, aportion of the second metal layer is between the bridge component andthe third metal layer, and metal of the first metal layer, the secondmetal layer, and the third metal layer together provide a bottom of thecavity.

Example G5 includes the subject matter of Example G1, and furtherspecifies that the second conductive contact is electrically coupled tometal of the second metal layer.

Example G6 includes the subject matter of Example G5, and furtherspecifies that metal of the first metal layer and the second metal layertogether provide a bottom of the cavity.

Example G7 includes the subject matter of any of Examples G1-6, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example G8 includes the subject matter of any of Examples G1-7, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, a surface insulation material is at the faceof the substrate, the surface insulation material includes an opening,and the conductive contact of the substrate is at a bottom of theopening.

Example G9 includes the subject matter of Example G8, and furtherincludes: solder on the conductive contact of the substrate.

Example G10 includes the subject matter of any of Examples G8-9, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example G11 includes the subject matter of Example G10, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example G12 includes the subject matter of any of Examples G1-11, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example G13 includes the subject matter of any of Examples G1-12, andfurther specifies that a bottom of the cavity has an undulating surface.

Example G14 includes the subject matter of Example G13, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example G15 includes the subject matter of Example G13, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example G16 includes the subject matter of any of Examples G1-15, andfurther specifies that a surface insulation material is at the face ofthe substrate, and the surface insulation material has a thicknessbetween 10 microns and 30 microns.

Example G17 includes the subject matter of any of Examples G1-16, andfurther specifies that the bridge component includes a semiconductormaterial.

Example G18 includes the subject matter of any of Examples G1-17, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example G19 is a microelectronic structure, including: a substrate; acavity in the substrate, a bottom of the cavity includes dielectricmaterial and metal; and a bridge component in the cavity, wherein thebridge component includes a first face and an opposing second face, thesecond face of the bridge component is between the first face of thebridge component and the substrate, the bridge component includes aconductive contact at the first face of the bridge component, the bridgecomponent includes a second conductive contact at the second face of thebridge component, the second conductive contact is electrically coupledto metal at a bottom of the cavity.

Example G20 includes the subject matter of Example G19, and furtherspecifies that a top surface of the metal at the bottom of the cavity iscoplanar with a top surface of the dielectric material at the bottom ofthe cavity.

Example G21 includes the subject matter of Example G20, and furtherspecifies that the substrate includes a metal ring at a perimeter of abottom of the cavity.

Example G22 includes the subject matter of Example G21, and furtherspecifies that the metal ring is coplanar with the metal at the bottomof the cavity.

Example G23 includes the subject matter of Example G19, and furtherspecifies that a top surface of the metal at the bottom of the cavity isnon-coplanar with a top surface of the dielectric material at the bottomof the cavity.

Example G24 includes the subject matter of Example G23, and furtherspecifies that a bottom surface of the metal at the bottom of the cavityis coplanar with a top surface of the dielectric material at the bottomof the cavity.

Example G25 includes the subject matter of any of Examples G19-24, andfurther specifies that the second conductive contact is electricallycoupled to metal at the bottom of the cavity by solder.

Example G26 includes the subject matter of any of Examples G19-25, andfurther specifies that the substrate includes an organic dielectricmaterial.

Example G27 includes the subject matter of any of Examples G19-26, andfurther specifies that the substrate includes a conductive contact atthe face of the substrate, the surface insulation material includes anopening, and the conductive contact of the substrate is at a bottom ofthe opening.

Example G28 includes the subject matter of Example G27, and furtherincludes: solder on the conductive contact of the substrate.

Example G29 includes the subject matter of any of Examples G27-28, andfurther specifies that the conductive contact of the substrate is afirst conductive contact of the substrate, the face of the substrate isa first face of the substrate, the substrate further includes a secondface of the substrate opposite to the first face of the substrate, andthe substrate further includes a second conductive contact at the secondface of the substrate.

Example G30 includes the subject matter of Example G29, and furtherspecifies that the second conductive contact is a second-levelinterconnect contact.

Example G31 includes the subject matter of any of Examples G19-30, andfurther specifies that the cavity is tapered, narrowing towards a bottomof the cavity.

Example G32 includes the subject matter of any of Examples G19-31, andfurther specifies that a bottom of the cavity has an undulating surface.

Example G33 includes the subject matter of Example G32, and furtherspecifies that the undulations have an amplitude between 1 micron and 10microns.

Example G34 includes the subject matter of Example G32, and furtherspecifies that the undulations have an amplitude that is less than 1micron.

Example G35 includes the subject matter of any of Examples G19-34, andfurther specifies that the surface insulation material has a thicknessbetween 10 microns and 30 microns.

Example G36 includes the subject matter of any of Examples G19-35, andfurther specifies that the bridge component includes a semiconductormaterial.

Example G37 includes the subject matter of any of Examples G19-36, andfurther specifies that the bridge component has a thickness that is lessthan 100 microns.

Example G38 is a microelectronic assembly, including: a substrate; amicroelectronic structure, including a bridge component in a cavity of asubstrate, in accordance with any of Examples G1-37; and amicroelectronic component having a first face and an opposing secondface, the first face of the microelectronic component is between thesecond face of the microelectronic component and the substrate, themicroelectronic component includes conductive contacts at the first faceof the microelectronic component, some of the conductive contacts of themicroelectronic component are conductively coupled to conductivecontacts of the substrate at the face of the substrate, and some of theconductive contacts of the microelectronic component are conductivelycoupled to conductive contacts at the first face of the bridgecomponent.

Example G39 includes the subject matter of Example G38, and furtherspecifies that a pitch of conductive contacts of the substrate isgreater than a pitch of conductive contacts of the bridge component.

Example G40 includes the subject matter of any of Examples G38-39, andfurther specifies that the microelectronic component is a firstelectronic component, and the microelectronic assembly further includes:a second electronic component having a first face and an opposing secondface, the first face of the second electronic component is between thesecond face of the second electronic component and the substrate, thesecond electronic component includes conductive contacts at the firstface of the second electronic component, some of the conductive contactsof the second electronic component are conductively coupled toconductive contacts of the substrate at the face of the substrate, andsome of the conductive contacts of the second electronic component areconductively coupled to conductive contacts at the first face of thebridge component.

Example G41 includes the subject matter of any of Examples G38-40, andfurther specifies that the microelectronic component includes a die.

Example G42 includes the subject matter of any of Examples G38-41, andfurther includes: a fill compound between the microelectronic componentand the substrate.

Example G43 includes the subject matter of Example G42, and furtherspecifies that the fill compound extends between the microelectroniccomponent and the bridge component.

Example G44 includes the subject matter of any of Examples G38-43, andfurther specifies that the microelectronic component includes atransistor.

Example G45 includes the subject matter of any of Examples G38-44, andfurther specifies that the microelectronic component includes a memorydevice.

Example G46 includes the subject matter of any of Examples G38-45, andfurther specifies that the microelectronic assembly has a footprint thatis less than 100 square millimeters.

Example G47 includes the subject matter of any of Examples G38-46, andfurther specifies that conductive contacts of the substrate include asurface finish, and the surface finish includes nickel.

Example G48 includes the subject matter of Example G47, and furtherspecifies that the surface finish further includes palladium and gold.

Example G49 includes the subject matter of any of Examples G38-48, andfurther specifies that the substrate includes one or more metal layersabove the cavity.

Example G50 includes the subject matter of any of Examples G38-49, andfurther specifies that the bridge component is embedded in thesubstrate.

Example G51 is an electronic device, including: a circuit board; and amicroelectronic assembly, in accordance with any of the microelectronicassemblies of any of Examples G38-48, conductively coupled to thecircuit board.

Example G52 includes the subject matter of Example G51, and furtherspecifies that the electronic device is a handheld computing device, alaptop computing device, a wearable computing device, or a servercomputing device.

Example G53 includes the subject matter of any of Examples G51-52, andfurther specifies that the circuit board is a motherboard.

Example G54 includes the subject matter of any of Examples G51-53, andfurther includes: a display communicatively coupled to the circuitboard.

Example G55 includes the subject matter of Example G54, and furtherspecifies that the display includes a touchscreen display.

Example G56 includes the subject matter of any of Examples G51-55, andfurther includes: a housing around the circuit board and themicroelectronic assembly.

1. A microelectronic structure, comprising: a substrate; a cavity at aface of the substrate; a first conductive contact of the substrate at abottom of the cavity; a second conductive contact of the substrateoutside the cavity; first solder on the first conductive contact; andsecond solder on the second conductive contact, wherein the first solderand the second solder have different material compositions.
 2. Themicroelectronic structure of claim 1, wherein the first solder and thesecond solder have different melting temperatures.
 3. Themicroelectronic structure of claim 1, wherein the first solder has ahigher melting point than the second solder.
 4. The microelectronicstructure of claim 1, further comprising: a bridge component in thecavity, wherein the bridge component includes a first face and anopposing second face, the second face of the bridge component is betweenthe first face of the bridge component and the substrate, the bridgecomponent includes a first conductive contact at the first face of thebridge component, the bridge component includes a second conductivecontact at the second face of the bridge component, and the secondconductive contact of the bridge component is coupled to the firstconductive contact of the substrate by the first solder.
 5. Amicroelectronic assembly, comprising: a substrate; a cavity at a face ofthe substrate; a first conductive contact of the substrate outside thecavity; a bridge component in the cavity, wherein the bridge componentincludes a first face and an opposing second face, the second face ofthe bridge component is between the first face of the bridge componentand the substrate, and the bridge component includes a second conductivecontact at the first face of the bridge component; and a microelectroniccomponent having a first face and an opposing second face, the firstface of the microelectronic component is between the second face of themicroelectronic component and the substrate, the microelectroniccomponent includes conductive contacts at the first face of themicroelectronic component, a first conductive contact of themicroelectronic component is conductively coupled to the firstconductive contact of the substrate, and a second conductive contact ofthe microelectronic component is conductively coupled, by aninterconnect, to the second conductive contact of the bridge component;wherein the interconnect includes a first solder material and a secondsolder material different from the first solder material.
 6. Themicroelectronic assembly of claim 5, wherein the interconnect is a firstinterconnect, the first conductive contact of the microelectroniccomponent is conductively coupled to the first conductive contact of thesubstrate by a second interconnect, and the second interconnect includesa third solder material and a fourth solder material different from thethird solder material.
 7. The microelectronic assembly of claim 6,wherein the third solder material is between the fourth solder materialand the first conductive contact of the microelectronic component. 8.The microelectronic assembly of claim 6, wherein the third soldermaterial has a different melting point than the fourth solder material.9. The microelectronic assembly of claim 6, wherein the third soldermaterial has a higher melting point than the fourth solder material. 10.The microelectronic assembly of claim 6, wherein the second interconnectfurther includes a fifth solder material different from the fourthsolder material.
 11. The microelectronic assembly of claim 10, whereinthe fourth solder material is between the fifth solder material and thethird solder material.
 12. The microelectronic assembly of claim 10,wherein the fourth solder material has a different melting point thanthe fifth solder material.
 13. The microelectronic assembly of claim 10,wherein the fourth solder material has a lower melting point than thefifth solder material.
 14. The microelectronic assembly of claim 10,wherein the fifth solder material has a same material composition as thethird solder material.
 15. The microelectronic assembly of claim 10,wherein the fifth solder material has a same material composition as thefirst solder material.
 16. The microelectronic assembly of claim 6,wherein the fourth solder material has a same material composition asthe second solder material.
 17. The microelectronic assembly of claim 6,wherein the third solder material has a same material composition as thefirst solder material.
 18. An electronic device, comprising: a circuitboard; and a microelectronic assembly conductively coupled to thecircuit board, wherein the microelectronic assembly includes: asubstrate; a cavity at a face of the substrate; a bridge component inthe cavity; and a microelectronic component having a first face and anopposing second face, the first face of the microelectronic component isbetween the second face of the microelectronic component and thesubstrate, the microelectronic component includes conductive contacts atthe first face of the microelectronic component, a first conductivecontact of the microelectronic component is conductively coupled to thefirst conductive contact of the substrate, and a second conductivecontact of the microelectronic component is conductively coupled, by aninterconnect, to the second conductive contact of the bridge component;wherein the interconnect includes a first solder material and a secondsolder material different from the first solder material.
 19. Theelectronic device of claim 18, wherein the interconnect is a firstinterconnect, the first conductive contact of the microelectroniccomponent is conductively coupled to the first conductive contact of thesubstrate by a second interconnect, and the second interconnect includesa third solder material.
 20. The electronic device of claim 18, whereinthe substrate further includes a second conductive contact in thecavity, the bridge component includes a third conductive contact at thesecond face of the bridge component, and the second conductive contactof the substrate is coupled to the third conductive contact of thebridge component by solder.